Ivanov A.I.1, R.A. Soots 1, Pulik A.D.1, I.V. Antonova 1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
Email: art.iv.il@mail.ru
Memristor structures with crossbar architecture were printed on a 2D inkjet printer. To make contacts, a suspension based on graphene particles was used. The memristor active layer was formed based on V2O5 nanoparticles encapsulated by fluorinated graphene. Stable resistive switchings were obtained with a ratio of currents in the open and closed states ON/OFF of two orders of magnitude and a switching voltage of 1.0-1.5 V. Currents in the open state increased with increasing area of the structures, which corresponds to conduction through localized states. Tensile strains that occur during bending of more than 2% lead to a decrease in the open state current; these changes are reversible. Varying the structures parameters, and, above all, reducing the active layer thickness makes it possible to switch to a multi-level switching mode. The promise of using such memristors to create non-volatile and multi-level memory with low energy consumption is shown. Keywords: memristor, crossbar structure, graphene contacts, fluorinated graphene, flexibility, multilevel switchings.
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