Physics of the Solid State
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Adjusting the Parameters of the Tunnel Barrier of the SIS Junction by Varying the Composition of the Top Electrode
Chekushkin A. M.
1, Paramonov M. E.
1, Koshelets V. P.
1
1Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
Email: chekushkin@hitech.cplire.ru, paramonov@hitech.cplire.ru, valery@hitech.cplire.ru
The influence of the top niobium nitride electrode in a Nb|Al-AlN|NbN multilayer structure on the parameters of the tunnel barrier (AlN) was studied. It has been shown that an increase in the nitrogen concentration in the Ar/N2 gas mixture during the formation of NbN by magnetron sputtering leads to a decrease in the tunneling transparency of the AlN barrier. Keywords: superconducting structures, tunneling junctions superconductor-isolator-superconductor, tunneling junction AlN, plasma chemical etching.
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