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InGaP/GaAs/Ge triple-junction solar cell with a thinned germanium substrate
Russian version
Putyato M. A.1, Preobrazhensky V. V.1, Semyagin B. R.1, Protasevich N. V. 1, Chistokhin I. B. 1, Petrushkov M. O. 1, Emelyanov E. A. 1, Vasev A. V. 1, Skachkov A. F. 2, Oleinik V. V. 2, Yanchur S. V.3, Drondin A. V.3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Joint Stock Company “Saturn”, Krasnodar, Russia
3State Scientific Center of the Russian Federation "Keldysh Research Center", Moscow, Russia
Email: puma@isp.nsc.ru
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The creating problems of lightweight flexible InGaP/GaAs/Ge solar cells with a thinned germanium substrate and approaches for their solution are discussed. Design of a lightweight flexible solar cell with a Ge substrate thinned to 40x80 mm has been implemented, based on 40 mm by 80 mm standard photovoltaic cell with anti-radiation glass 120 μm thick. Specific weight and ultimate bending radius of the experimental sample was ~ 0.6 kg/m2 and - ~ 54 mm respectively. It efficiency for AM0 spectrum at the temperature of 28oC is 27.6% with a fill factor of ~ 83.8%. It has been shown that germanium surface passivity by means several silicon atom layers deposited from an atomic flux at temperatures below 80oC reduces the back surface recombination. Keywords: space solar cells, mass-dimensional characteristics, thin solar cells, thin solar cell creation problems.
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