Zakgeim A. L.1, Klimov A. A.2, Lukhmyrina T. S. 2, Matveev B. A.2, Chernyakov A. E.1
1Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: Chernyakov.anton@ya.ru
This paper examines the thermal resistance of the mid-infrared "flip-chip" LEDs based on the p-InAsSbP/n-InAsSb heterostructure. It was shown that the measurement of thermal resistance via a thermal control unit (forward p-n junction voltage) for LEDs based on narrow-gap semiconductors must be carried out at low temperature when thermal control unit is constant. Keywords: mid-IR range, IR LED, thermal resistance, thermal control unit.
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