Longwave (λ0.1=10 μm, 296 K) infrared photodetectors based on InAsSb0.38 solid solution
Kunkov R. E.1, Klimov A. A.1, Lebedeva N. M.1, Lukhmyrina T. S.1, Matveev B. A.1, Remennyy M. A.1, Usikova A. A.1
1Ioffe Institute, St. Petersburg, Russia
Email: romunkov@yandex.ru
Photodetectors based on diode heterostructure with InAsSbx photosensitive region (x = 0.38) with long-wave cut-off λ0.1 about 10 μm (296 K) are investigated. The dependences of dark current density and detectivity in the temperature range of 200-425 K have been investigated. It is shown that the experimental samples are characterized by values of dark current density about 500 A/cm2 at room temperature, detectivity 1.2·109 and 5·109 cmHz1/2W-1 at room temperature and 250 K, respectively, and diffusion mechanism of current flow in the temperature range 200-350 K. Keywords: long-wavelength photodetectors, AIIIBV semiconductors, InAsSb solid solutions, photodiodes.
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