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Magnetotransport properties of α'''-(Cd0.5Zn0.5)3As2 single crystals subjected to hydrostatic pressure
Saypulaeva L. A.1, Zakhvalinskii V. S.2, Alibekov A. G.1, Pirmagomedov Z. Sh.1, Kochura A. V.
3, Marenkin S. F.4, Ril A. I.4
1Amirkhanov Institute of Physics, Daghestan Federal Research Center, Russian Academy of Sciences, Makhachkala, Russia
2Belgorod National Research University, Belgorod, Russia
3Southwest State University, Kursk, Russia
4Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russia
2Belgorod National Research University, Belgorod, Russia
3Southwest State University, Kursk, Russia
4Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russia
Email: akochura@mail.ru, l.saypulaeva@gmail.com
In α'''-(Cd0.5Zn0.5)3As2, the effect of high hydrostatic pressure up to 9 GPa on the transport and field dependence of the transverse magnetoresistance has been investigated. This structure is tetragonal (p. g. I41 /amd) with parameters a=b=8.55 Angstrem and c=24.13 Angstrem. A Toroid-type chamber was used to generate high pressure. It is shown that increasing the pressure leads to suppression of positive magnetoresistance. In the phase transition region, the negative magnetoresistance at pressure P~5.4 GPa in a 5 kOe field takes a minimum value approximately equal to -0.15. Keywords: high pressure, semiconductor, specific electrical resistance, Hall coefficient, magnetoresistance.
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