Volumes and Issues
Home » Technical Physics » Year 2023, issue 9 » Article p. 1259
<<<>>>
Silicon differential photodetectors. Technology, characteristics, application
Russian version
V.V. Gavrushko1, A.S. Ionov1, O.R. Kadriev1, V.A. Lastkin1
1Yaroslav-the-Wise Novgorod State University, Veliky Novgorod, Russia
Email: Valery.Gavrushko@novsu.ru
PDF
A silicon-based photodetector containing two identical n^+-p-photodiodes is described. One of the photodiodes had a wide spectral response with high sensitivity in the ultraviolet region. The sensitivity of the second was reduced in the short-wavelength part of the spectrum by creating additional recombination centers in the near-surface region by implanting As ions. The spectral sensitivity of the differential signal obtained by subtracting photocurrents had a pronounced short-wavelength characteristic. The long-wavelength limit of the spectral range in terms of the λ0.5 level, depending on the doping dose, was in the range of 0.37-0.47 μm. The sensitivity maximum corresponded to λmax=0.32-0.37 μm. The electrical and noise characteristics of the photodetector are given. The possibility of using differential photodetectors as two-color ones is shown. Keywords: Photodiode, implantation, differential signal, ultraviolet, two-spectrum photodetector.
  1. A.M. Prokhorov (Editor-in-Chief) Fizicheskiy entsiklopedicheskiy slovar /Gl. red. A.M. Prokhorov (Sovetskaya entsiklopediya, M., 1983) (in Russian)
  2. J. Fryden. Modern sensors. Handbook (Technosphere, M., 2005)
  3. N.T. Gurin, S.G. Novikov, I.V. Korneev, A.A. Shtanko, V.A. Rodionov. Pisma v ZhTF 37, (6), 57 (2011). (in Russian)
  4. M.V. Kitaeva, A.V. Yurchenko, A.V. Ohorzina, A.V. Skorokhodov. Polzunovskij vestnik, 3/1, 196 (2011) (in Russian)
  5. A.M. Filachev, V.P. Ponomarenko, I.I. Taubkin. Prikladnaya fizika, 2, 102 (2003). (in Russian)
  6. M.L. Baranochnikov. Priyemniki i detektory izlucheniy.. Spravochnik (DMK Press, M. 2012)
  7. I.D. Anisimov, I.M. Vikulin, F.A. Zaitov, Sh.D. Kurmashev. Poluprovodnikovyye fotopriyemniki: Ul'trafioletovyy, vidimyy i blizhniy IK diapazony spektra (Radio i svyaz', M., 1984)
  8. R.J. Kies (ed.). Fotopriyemniki vidimogo i IK diapazonov. Transl. from English. (Radio i svyaz, M., 1985) (in Russian)
  9. A.M. Filachev, I.I. Taubkin, M.A. Trishenkov. Sovremennoye sostoyaniye i magistral'nyye napravleniya razvitiya tverdotel'noy fotoelektroniki (Fizmatkniga, M., 2010) (in Russian)
  10. A.V. Voytsekhovsky, N.A. Kulchitsky, A.A. Melnikov, S.N. Nesmelov, S.M. Dzyadukh. Nano i mikrosistemnaya tekhnika,143 (6), 30 (2012) (in Russian)
  11. Y.I. Belousov, E.S. Postnikov. Infrakrasnaya fotonika. Chast' II Osobennosti registratsii i analiza teplovykh poley. Manual (ITMO University, SPb, 2019)
  12. R. Hayman. Svetofiltry. Transl. from English. (In Russian) (Mir, M., 1988) (in Russian)
  13. E. Ritter. Fizika tonkikh plenok, 8, 7 (1978)
  14. G.V. Rosenberg. Optika tonkosloynykh pokrytiy (Nauka, M., 1991)
  15. Electronic resource 0AO "LLS". Available at: info@lenlasers.ru
  16. Y.A. Goltberg, B.V. Tsarenkov. ZhTF, 66 (8), 195 (1996) (in Russian)
  17. Y.A. Glebov, N.Y. Zvereva, Y.A. Kazarova, O.G. Revzina, L.S. Shenderovich. Prikladnaya fizika, 3, 84 (2007). (in Russian)
  18. Sh.A. Furman. Tonkosloinye opticheskie pokrytiya (Mashinostroenie, L., 1977) (in Russian)
  19. G.Ya. Kolodny, E.A. Levchuk, Y.D. Poryadin, P.P. Yakovlev. Elektron. Prom-st., 5, 93 (1981). (in Russian)
  20. V.V. Gavrushko, A.S. Ionov, V.A. Lastkin. Nauka, Tekhnologiya, Biznes, 100 (2), 72 (2010). (in Russian)
  21. US Patent N 7196311, H01L 27/15 dated 11.08.2005
  22. BY Patent N 8532 U1, H01L 27/15 dated 30.08.2012
  23. Patent RU N 156627 U, H01L 31/068 dated 05.05.2015
  24. V.V. Gavrushko, A.S. Ionov, O.R. Kadriev, V.A. Lastkin. ZhTF, 87 (2), 310 (2017). (in Russian)
  25. R. Korde, L.R. Canfield, B. Wallis. Proc. SPIE, 932, 153 (1988)
  26. V.V. Gavrushko, A.S. Ionov, V.A. Lastkin. Datchiki i sistemy, 121 (6), 49 (2009)
  27. V.V. Gavrushko, V.A. Lastkin. Vestnik of Novgorodskogo gos. un-ta, 65, 17 (2011). (In Russian)
  28. V.V. Gavrushko, A.S. Ionov, V.A. Lastkin. Tez. dokl. IV Vserossiyskoy konferentsii Fizicheskiye i fiziko-khimicheskiye osnovy ionnoy implantatsii" (Novosibirsk, Russia, 2012), p. 37
  29. A.P. Gorshkov, I.A. Karpovich, E.D. Pavlova, N.S. Volkova. FTP, 46 (12), 1542 (2012) (in Russian)
  30. S. Namba. Technology of Ion Doping. Per. s Japanese (Sov. Radio, M., 1974)
  31. V.S. Vavilov, A.R. Chelyadinskiy. UFN, 165 (3), 347 (1995) (in Russian)
  32. J.F. Ziegler, J.P. Biersack, M.D. Ziegler. Nucl. Instrum. Methods Phys. Res. B, 268, 1818 (2010)
  33. V.V. Gavrushko, A.S. Ionov, V.A. Lastkin. Patent na poleznuyu model' kremniyevyy fotopriyemnik s zadavayemoy spektral'noy kharakteristikoy(N 166199 27.11.2016)
  34. V.V. Gavrushko, A.S. Ionov, O.R. Kadriev. Mater. Sci. Eng., 441 (1), 1 (2018)
  35. V.V. Gavrushko, A.S. Ionov, O.R. Kadriev, V.A. Lastkin. J. Phys.: Conf. Series, 2052, 012 (2021)
  36. V.V. Pasynkov, L.K. Chirkin, A.D. Shinkov. Poluprovodnikovye pribory (M., Vyssh. shk., 1981) (Russian)
  37. V.I. Stafeev. FTT, 3, (1), 185 (1961). (in Russian)
  38. V.V. Gavrushko, O.R. Kadriev, V.A. Lastkin, A.A. Sapozhnikov. Vestnik of Novgorodskogo gos. un-ta, 104 (6), 17 (2017). (In Russian)
  39. GOST 21934-83 Priyemniki izlucheniya poluprovodnikovyye fotoelektricheskiye i fotopriyemnyye ustroystva.
  40. Patent RU N 1763331 U1, H01L 31/068 dated 02.05.2017
  41. V.V. Gavrushko, A.S. Ionov, O.R. Kadriev, V.A. Lastkin. Vestnik of Novgorodskogo gos. un-ta, 107, 4 (2018). (In Russian)
  42. V.V. Zabrodsky, P.N. Aruev, V.P. Belik, B.Ya. Ber, D.Yu. Kazantsev, M.V. Drozdova, N.V. Zabrodskaya, M.S. Lazeeva, A.D. Nikolenko, V.L. Sukhanov, V.V. Philimonov, E.V. Sherstnev. FTP, 47, (2), 178 (2013). (in Russian)
  43. A.V. Klyuev, E.I. Shmelev, A.V. Yakimov. Izvestiya Vuzov. Radiofizika, LVII (12), 995 (2014). (in Russian)
  44. S. Zi. Fizika poluprovodnikovyk priborov (M., Mir, 1984) v. 2. (in Russian)
  45. V.V. Gavrushko, A.S. Ionov, A.A. Sapozhnikov. Vestnik of Novgorodskogo gos. un-ta, 109 (3), 13 (2018). (In Russian)
  46. M.A. Trishenkov. Fotopriyemnyye ustroystva i PZS. Obnaruzheniye slabykh opticheskikh signalov (Radio i svyaz'., M., 1992)
  47. V.I. Sankin, V.P. Chelibanov. Phys. Stat. Sol. A, 185 (1), 153 (2001)
  48. I.K. Kikoin, (red.) Tablitsa fizicheskikh velichin. Spravochnik (Atomizdat, M., 1976) (in Russian)
  49. V.A. Kaptsov, V.N. Deinego. Health Risk Analysis, 13 (1), 15 (2016)
  50. A. V. Vinogradova, M. R. Sidorova. Expertiza. Kachestvo. Tekhnologii. Sb. mater. Mezhdunar. scientific-practical conf. (Novosibirsk, 2020), p. 229 - 233
  51. V.V. Gavrushko, O.R. Kadriev. Vestnik of Novgorod State University named after Yaroslav the Wise, 2 (114), 4 (2019)
  52. V.N. Krasnoshchekova, N.V. Ilyukhin, S.S. Romanova, L.H. Akhmetova. Gigiyena truda i meditsinskaya ekologiya, 3, 98 (2015).

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru