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Investigation of the filament properties in the HfO2-based structures using conductive atomic force microscopy
Russian version
Isaev A. G. 1,2, Permiakova O. O.1,2, Rogozhin A. Е1
1Valiev Institute of Physics and Technology of RAS, Moscow, Russia
2Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudnyi, Russia
Email: isaev.ag@phystech.edu, o.permyakova@phystech.edu
PDF
The results of the research on the resistive switching in Pt/HfO2/HfOxNy/TiN, Pt/HfO2/TaOxNy/TiN and Pt/Al2O3/HfO2/TaOxNy/TiN structures are presented. Active layers of the structures were deposited by atomic layer deposition. The formation of conductive filaments in all three structures was demonstrated using conductive atomic force microscopy. A full cycle of resistive switching with a microscope probe in these structures was also demonstrated. The properties of filaments formed at different voltages were studied, and the distributions of the filament density by conductivity and size were presented. The characteristics of the studied structures were compared. It appears that the Pt/Al2O3/HfO2/TaOxNy/TiN structure has the greatest potential for resistive random-access memory application. Keywords: memristor, resistive switching, resistive random-access memory, conductive atomic force microscopy.
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