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Silicon-on-insulator structures microtopography transformations features after photonic and corpuscular radiation exposure
Loginov B. A.
1, Blinnikov D. Y.2, Vtorova V. S.2, Kirillova V. V.2, Liashko E. A.2, Makeev V. S.2, Pervykh A. R.2, N.D. Abrosimova3, Zabavichev I.Yu.
3,4, Puzanov A. S.
3,4, Volkova E. V.4, E.A.Tarasova
4, S.V. Obolensky3,4
1National Research University of Electronic Technology (MIET), Zelenograd, Russia
2Educational Center “Sirius”, Sochi, Russia
3Federal State Unitary Enterprise RFNC-VNIIEF, RFNC-VNIIEF Branch «Measuring Systems Research Institute named after Yu. Ye. Sedakov», Nizhny Novgorod, Russia,
4Lobachevsky University of Nizhny Novgorod, Nizhny Novgorod, Russia
2Educational Center “Sirius”, Sochi, Russia
3Federal State Unitary Enterprise RFNC-VNIIEF, RFNC-VNIIEF Branch «Measuring Systems Research Institute named after Yu. Ye. Sedakov», Nizhny Novgorod, Russia,
4Lobachevsky University of Nizhny Novgorod, Nizhny Novgorod, Russia
Email: b-loginov@mail.ru, blinnikovdanil@yandex.ru, vlada_vtorova@mail.ru, uctasili@yandex.ru, ea.lyashko@gmail.com, sevulek06@gmail.com, pervantrom@gmail.com, zabavichev.rf@gmail.com, aspuzanov@inbox.ru, volkova@rf.unn.ru, tarasova@rf.unn.ru, andnenastik@inbox.ru
The article presents the results of studies of microrelief parameters and electrophysical characteristics of "silicon on insulator" structures after exposure to gamma and gamma neutron radiation. Experimental studies were carried out using the methods of atomic force microscopy and pseudo-MOS transistor. On the basis of the data obtained, an estimate was made of the average size and area of the space charge of clusters of radiation defects. Keywords: AFM, silicon on insulator, pseudo-MOS, "subthreshold" defect formation, radiation defects clusters. DOI: 10.61011/TP.2023.07.56645.91-23
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- E.V. Volkova, A.B. Loginov, B.A. Loginov, E.A. Tarasova, A.S. Puzanov, S.A. Korolev, E.S. Semenov, S.V. Khazanova, S.V. Obolensky. FTP, 55 (10), 846 (in Russian). DOI: 10.21883/FTP.2021.10.51431.19
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