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Home » Technical Physics » Year 2023, issue 7 » Article p. 829
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Emission characteristics of a laser-plasma source of extreme ultraviolet radiation with thin-film targets
Russian version
DOI: 10.61011/TP.2023.07.56623.97-23
Lopatin A.Ya.1, Luchin V.I.1, Nachay A.N.1, Perekalov A.A.1, Pestov A.E.1, Salashchenko N.N.1, Soloviev A.A.2, Tsybin N.N.1, Chkhalo N.I.1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: lopatin@ipm.sci-nnov.ru, luchin@ipmras.ru, nechay@ipm.sci-nnov.ru, perekalov@ipmras.ru, aepestov@ipm.sci-nnov.ru, salashch@ipm.sci-nnov.ru, so_lo@ipfran.ru, tsybin@ipm.sci-nnov.ru, chkhalo@ipm.sci-nnov.ru
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The radiation spectra in the soft X-ray and extreme ultraviolet wavelength ranges of thin-film (0.15 μm) targets made of light materials (Si, C, Be) were studied when excited by a Nd:YAG laser pulse with a duration of 5.2 ns focused to an intensity of ~1012 W/cm2. Line spectra of BeIII, BeIV, CV, and SiV ions were recorded using a spectrometer based on a multilayer X-ray mirror. A comparison with the spectra of bulk solid-state targets of the same materials is carried out. In all cases, there was a decrease in the intensity of the lines of the soft X-ray spectrum of film targets compared to monolithic ones; the decrease was, depending on the material, from several tens of percent to several times, with more than an order of magnitude less mass of the vaporized substance. Keywords: SXR and EUV radiation, thin films, laser plasma. DOI: 10.61011/TP.2023.07.56623.97-23
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