Physics of the Solid State
To authors
Volumes and Issues
- 2023
- 2022
Synthesis of strontium iridates thin films by cathode sputtering: comparison with traditional laser ablation technology
Kislinskii Yu. V.
1, Moskal I. E.1, Petrzhik A. M.
1, Shadrin A. V.
1,2, Ovsyannikov G. A.
1
1Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
2Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, Russia
2Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, Russia
Email: yulii@hitech.cplire.ru
The technology of obtaining structured thin films of strontium iridates of the compositions SrIrO3 and Sr2IrO4 by direct current cathode sputtering is presented. Both compositions were synthesized using the stoichiometric target Sr2IrO4, only the technological parameters varied. The composition of the resulting films was determined by the operating pressure and temperature. The electrophysical and structural properties of the obtained dielectric Sr2IrO4 and "metallic" SrIrO3 films are discussed. The dielectric series is compared with Sr2IrO4 films obtained by laser ablation previously. Keywords: strontium iridate, cathode sputtering, metals, disordered structures, hopping conductivity, activation energy of charge carriers. DOI: 10.61011/PSS.2023.07.56388.36H
- K. Nishio, H.Y. Hwang, Y. Hikita. APL Mater. 4, 036102 (2016)
- A. Gutierrez-Llorente, L. Iglesias, B. Rodri guez-Gonzalez, F. Rivadulla. APL Mater. 6, 091101 (2018)
- A.M. Petrzhik, K.Y. Constantinian, G.A. Ovsyannikov, A.V. Zaitsev, A.V. Shadrin, A.S. Grishin, Yu.V. Kislinskii, G. Cristiani, G. Logvenov. Phys. Rev. B 100, 024501 (2019)
- A.M. Petrzhik, G. Cristiani, G. Logvenov, A.E. Pestun, N.V. Andreev, Yu.V. Kislinskii, G.A. Ovsyannikov. Tech. Phys. Lett. 43, 6, 554 (2017)
- J.P. Gong, M. Kawasaki, K. Fujito, R. Tsuchia, M. Yoshimoto, H. Koinuma. Phys. Rev. B 50, 3280 (1994)
- C. Lu, A. Quindeau, H. Deniz, D. Preziosi, D. Hesse, M. Ale\=xe. Appl. Phys. Lett. 105, 082407 (2014)
- V. Fuentes, B. Vasic, Z. Konstantinovic, B. Martinez, L. Balcels, A. Pomar. J. Magn. Magn. Mater. 501, 166419 (2020)
- M.E. Gershenzon, V.N. Gubankov, M.I. Falei. Sov. Phys. JETP 63, 6, 1287 (1986)
- N. Apsley, H.P. Hughes. Phil. Mag. 31, 1327 (1975)
- Yu.V. Kislinskii, K.Y. Constantinian, I.E. Moskal, A.M. Petrzhik, A.V. Shadrin, G.A. Ovsyannikov. Phys. Solid State 64, 10, 1394 (2022)
- Boris I. Shklovski, Alex L. Efros. "Electronic properties of doped semiconductors." Springer Series in Solid-State Sciences. Book series SSSOL V. 45 (1984)
- Gang Cao, Pedro Schlottmann. Rep. Prog. Phys. 81, 042502 (2018)
- K.-U. Barholz, M.Yu. Kupriyanov, U. Hubner, F. Schmidl, P. Seidel. Physica C 334, 175 (2000)
- N.E. Hussey, K. Takenaka, H. Takagi. Phil. Mag. 84, 2847 (2004)
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.