Tuning the luminescence of thin nanocrystalline CsPbBr3 perovskite films during the in situ anion exchange reaction
Gulevich D.G. 1, Tkach A. A.1, Nabiev I. R.1,2, Krivenkov V. A. 1, Samokhvalov P. S. 1
1Laboratory of Nano-Bioengineering, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, Russia
2Laboratoire de Recherche en Nanosciences (LRN-EA4682), Université de Reims Champagne-Ardenne, Reims, France
Email: dayana_gulevich@mail.ru, igor.nabiev@gmail.com, vkrivenkov@list.ru, p.samokhvalov@gmail.com

Inorganic perovskite CsPbX3 nanocrystals (PNCs), where X is a halide anion, are currently promising materials for a wide range of optoelectronic devices. One of the key tasks to be solved before they are used in practice is to obtain stable thin PNC films whose luminescence wavelength could be finely tuned. The chemical composition of CsPbX3 PNCs is the main parameter determining their band gap width and, hence, the position of their photoluminescence maximum. Variation of the PNC composition in the course of their synthesis or postsynthetic treatment in solution makes it possible to obtain CsPbBr(3-x)Ix and CsPbBr(3-y)Cly materials emitting in the entire visible spectral range. In addition, these PNCs are more structurally stable than CsPbCl3 and CsPbI3 ones. However, most exchange reactions in solution reported in published studies are spontaneous and poorly controllable. In this study, the anion exchange reaction is proposed to be carried out directly on the formed thin film of CsPbBr3 incorporated in the matrix of a copolymer of methyl and lauryl methacrylates. The exchange reactions with octadecylammonium iodide and PbI2 leading to a shift of the photoluminescence maxima to longer wavelengths by 130 and 137 nm within 15 and 6 min, respectively. The study also shows the possibility of carrying out an ion exchange reaction on a substrate mimicking the real structure of a light-emitting diode. Keywords: inorganic perovskite nanocrystals, anion exchange, thin films, photoluminescence.
  1. L. Protesescu, S. Yakunin, M. Bodnarchuk, F. Krieg, R. Caputo, C.H. Hendon, R. Yang, A. Walsh, M. Kovalenko. Nano Lett., 15 (6), 3692 (2015). DOI: 10.1021/nl5048779
  2. G. Li, Z.-K. Tan, D. Di, M.L. Lai, L. Jiang, J.H.-W. Lim, R.H. Friend, N.C. Greenham. Nano Lett., 15 (4), 2640 (2015). DOI: 10.1021/acs.nanolett.5b00235
  3. Q. Zhong, M. Cao, H. Hu, D. Yang, M. Chen, P. Li, L. Wu, Q. Zhang. ACS Nano, 12 (8), 8579 (2018). DOI: 10.1021/acsnano.8b04209
  4. Z.-J. Li, E.J. Hofman, J. Li, A.H. Davis, C. Tung, L.Z. Wu, W. Zheng. Adv. Funct. Mater., 28 (1), 1704288 (2017). DOI: 10.1002/adfm.201704288
  5. Y. Cai, L. Wang, T. Zhou, P. Zheng, Y. Li, R. Xie. Nanoscale, 10 (45), 21441 (2018). DOI: 10.1039/C8NR06607H
  6. M.V. Kovalenko, L. Protesescu, M.I. Bondarchuk. Science, 358 (6364), 745 (2017). DOI: 10.1126/science.aam7093
  7. S.D. Stranks, H.J. Snaith. Nat. Nanotechnol., 10 (5), 391 (2015). DOI: 10.1038/nnano.2015.90
  8. L. Su, Z.X. Zhao, H.Y. Li, J. Yuan, Z.L. Wang, G.Z. Cao, G. Zhu. ACS Nano, 9 (11), 11310 (2015). DOI: 10.1021/acsnano.5b04995
  9. J.Y. Kim, J.-W. Lee, H.S. Jung, H. Shin, N.-G. Park. Chem. Rev., 120 (15), 7867 (2020). DOI: 10.1021/acs.chemrev.0c00107
  10. G.E. Eperon, G.M. Paterno, R.J. Sutton, A. Zampetti, A.A. Haghighirad, F. Cacialli, H.J. Snaith. J. Mater. Chem. A, 3 (39), 19688 (2015). DOI: 10.1039/C5TA06398A
  11. Y. Wang, T. Zhang, M. Kan, Y. Zhao. J. Am. Chem. Soc., 140 (39), 12345 (2018). DOI: 10.1021/jacs.8b07927
  12. S. Tan, B. Yu, Y. Cui, F. Meng, C. Huang, Y. Li, Z. Chen, H. Wu, J. Shi, Y. Luo, D. Li, Q. Meng. Angew. Chem. Int. Ed., 61, e202201300 (2022). DOI: 10.1002/anie.202201300
  13. N.A.N. Ouedraogo, Y. Chen, Y.Y. Xiao, Q. Meng, C.B. Han, H. Yan, Y. Zhang. Nano Energy, 67, 104249 (2019). DOI: 10.1016/j.nanoen.2019.104249
  14. Y. Su, X. Chen, W. Ji, Q. Zeng, Z. Ren, Z. Su, L. Liu. ACS Appl. Mater. Interfaces, 9 (38), 33020 (2017). DOI: 10.1021/acsami.7b10612
  15. A. Ho-Baillie, M. Zhang, C.F.J. Lau, F.-J. Ma, S. Huang. Joule, 3 (4), 938 (2019). DOI: 10.1016/j.joule.2019.02.002
  16. D.S. Tstvetkov, M.O. Mazurin, V.V. Sereda, I.L. Ivanov, D.A. Malyshkin, A.Yu. Zuev. J. Phys. Chem. C, 124 (7), 4252 (2020). DOI: 10.1021/acs.jpcc.9b11494
  17. G. Yuan, C. Ritchie, M. Ritter, S. Murphy, D.E. Gomez, P. Mulvaney. J. Phys. Chem. C, 122 (25), 13407 (2017). DOI: 10.1021/acs.jpcc.7b11168
  18. Y. Huang, W. Luan, M. Liu, L. Turyanska. J. Mater. Chem. C, 8 (7), 2381 (2020). DOI: 10.1039/C9TC06566K
  19. S. Kundu, T.L. Kelly. EcoMat, 2 (2), e12025 (2020). DOI: 10.1002/eom2.12025
  20. Y. Hu, F. Bai, X. Liu, Q. Ji, X. Miao, T. Qiu, S. Zhang. ACS Energy Lett., 2 (10), 2219 (2017). DOI: 10.1021/acsenergylett.7b00508
  21. C. Guhrenz, A. Benad, C. Ziegler, D. Haubold, N. Gaponik, A. Eychmuller. Chem. Mater., 28 (24), 9033 (2016). DOI: 10.1021/acs.chemmater.6b03980
  22. Q. A. Akkerman, V. D'Innocenzo, S. Accornero, A. Scarpellini, A. Petrozza, M. Prato, L. Manna. J. Am. Chem. Soc., 137 (32), 10276 (2015). DOI: 10.1021/jacs.5b05602
  23. G. Nedelcu, L. Protesescu, S. Yakunin, M.I. Bodnarchuk, M.J. Grotevent, M.V. Kovalenko. Nano Lett., 15 (8), 5635 (2015). DOI: 10.1021/acs.nanolett.5b02404
  24. M. Grabolle, M. Spieles, V. Lesnyak, N. Gaponik, A. Eychmuuller, U. Resch-Genger. Anal. Chem., 81 (15), 6285 (2009). DOI: 10.1021/ac900308v
  25. S. Damoun, R. Papin, G. Ripault, M. Rousseau, J.C. Rabadeux, D. Durand. J. Raman Spectrosc., 23 (7), 385 (1992). DOI: 10.1002/jrs.1250230704
  26. L.B. Matyushkin, V.A. Moshnikov. Semiconductors, 51 (10), 1337 (2017). DOI: 10.1134/S106378261710013X

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