Power Source based on Al0.8Ga0.2As/GaAs photovoltaic converter and YPO4 : Eu/(238Pu) radioluminescent emitter
Prudchenko K.K. 1, Tolkachev I.A. 1, Kontrosh E.V. 1, Silantieva E.A.1, Kalinovskii V.S. 1
1Ioffe Institute, St. Petersburg, Russia
Email: prudchenkokk@mail.ioffe.ru, tolkachevia@mail.ioffe.ru, kontrosh@mail.ioffe.ru

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An AlGaAs/GaAs photovoltaic converter for a mock-up of an environmentally friendly radioisotope energy source of ultra-long use with a YPO4 : Eu/(238Pu) radioluminescent emitter with an extremely low content of the isotope 238Pu<0.1 wt.% was studied. The modeling of the Al0.8Ga0.2As/GaAs heterostructure for the conversion of nanowatt power levels of an optical signal has been carried out. The calculated and experimental efficiency of the mock-up with a photovoltaic converter at a radioluminescent source power of 1 nW was ~1.4%. Keywords: radioisotope energy source, AlGaAs/GaAs photo converter, optical radiation radioluminescent source, current flow mechanisms, conversion efficiency.
  1. O.L. Ayodele, K.O. Sanusi, M.T. Kahn. J. Engineering, Design and Technology, 17 (1), 172 (2019). DOI: 10.1108/JEDT-02-2017-0011
  2. Z. Xu, Yu. Liu, Zh. Zhang, W. Chen, Z. Yuan, K. Liu, X. Tang. Wiley Energy Research, 42 (4), 1729 (2018). DOI: 10.1002/er.3982
  3. A.A. Krasnov, S.A. Legotin. Instruments and Experimental Techniques, 63 (4), 437 (2020)
  4. Zh.-R. Zhang, X.-B. Tang, Yu.-P. Liu, Zh.-H. Xu, Z.-Ch. Yuan, K. Liu, W. Chen. Nuclear Instruments and Methods in Physics Research B, 398, 35 (2017). DOI: 10.1016/j.nimb.2017.03.060
  5. A.A. Svintsov, E.B. Yakimov, M.V. Dorokhin, P.B. Demina, Yu.M. Kuznetsov. Semiconductors, 53 (1), 96 (2019)
  6. S. Deus. Proc. 28 st IEEE Photovoltaics Specialist Conf., 1246-1249 (2000)
  7. V.V. Svetukhin, S.G. Novikov, A.V. Berintsev, A.A. Chertoriysky, A.S. Alekseev. Proceedings of Universities. Electronics, 21 (5), 429 (2016)
  8. B.E. Burakov, V.M. Garbuzov, A.A. Kitsay, V.A. Zirlin, M.A. Petrova, Ya.V. Domracheva, M.V. Zamoryanskaya, E.V. Kolesnikova, M.A. Yagovkina, M.P. Orlova. Semiconductors, 41 (4), 427 (2007). DOI: http://dx.doi.org/10.1134/S1063782607040124
  9. M.V. Zamoryanskaya, E.V. Dementeva, K.N. Orekhova, V.A. Kravets, A.N. Trofimov, G.A. Gusev, I. Ipatova, B.E. Burakov. Materials Research Bulletin, 142, 111431 (2021). DOI: 10.1016/j.materresbull.2021.111431
  10. B.E. Burakov, M.I. Ojovan, W.E. Lee (Ed.). Crystalline Materials for Actinide Immobilization, 1 (Imperial College Press, 2010)
  11. B. Wardle. Principles and Applications of Photochemistry (Wiley, 2010), p. 30
  12. S.M. Sze. Physics of Semiconductor Devices (John Wiley \& Sons, NY., Chichester, Brisbar, Toronto, Singapore, 1981)
  13. K.K. Prudchenko, M.V. Zamoryanskaya, V.S. Kalinovskii, E.V. Kontrosh, I.A. Tolkachev, K.N. Orekhova, A.N. Trofimov, B.E. Burakov, E.V. Dement'eva. Radioizotopny istochnik energii, Patent RF N RU 207 579 (02.11.2021) (in Russian)
  14. V.M. Andreev, V.V. Evstropov, V.S. Kalinovsky, V.M. Lantratov, V.P. Khvostikov. Semiconductors, 43 (5), 644 (2009). DOI: 10.1134/S1063782609050200
  15. V.S. Kalinovskii, E.V. Kontrosh, G.V. Klimko, T.S. Tabarov, S.V. Ivanov, V.M. Andreev. Tech. Phys. Lett., 44 (11), 1013 (2018). DOI: 10.1134/S1063785018110214

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