Volumes and Issues
Home » Technical Physics » Year 2022, issue 11 » Article p. 1475
<<<>>>
Crystallization and silicon carbide formation in two-layer amorphous silicon-carbon films during electron irradiation
Russian version
DOI: 10.21883/TP.2022.11.55178.180-22
Sidorov A.I.1, Leks E. Y.2, Podsvirov O.A.2, Vinogradov A. Y. 3
1 ITMO University, St. Petersburg, Russia
2Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
Email: sidorov@oi.ifmo.ru, lexelenaya@gmail.com, olegpodsvir@mail.ru, vingrdov@gmail.com
PDF
It is shown that the irradiation by focused electron beam with electron energy of 10 keV of two-layer amorphous silicon-carbon films 60 nm thick results in films partial crystallization. Moreover, in the irradiated zone the layer of crystalline silicon carbide with luminescent properties is formed. The observed effects are confirmed by methods of Raman spectroscopy and by luminescence spectra Keywords: silicon, carbon, silicon carbide, film, structure, electron beam, Raman spectroscopy.
  1. C. Casiraghi, J. Robertson, A.C. Ferrari. Mater. Today, 10, 44 (2007)
  2. R. Hauert. Tribol. Int., 37, 991 (2004)
  3. J.P. Sullivan, T.A. Friedmann, K. Hjort. MRS Bull., 26, 309 (2001)
  4. A.C. Ferrari. Surf. Coat. Technol., 180-181, 190 (2004)
  5. A.C. Ferrari, J. Robertson. Phys. Rev. B, 61, 14095 (2000)
  6. A.C. Ferrari, J. Robertson. Phys. Rev. B, 64, 075414 (2001)
  7. C. Casiraghi, A.C. Ferrari, J. Robertson. Phys. Rev. B, 72, 085401 (2005)
  8. A.C. Ferrari, S.E. Rodil, J. Robertson. Phys. Rev. B, 67, 155306 (2003)
  9. B. Racine, A.C. Ferrari, N.A. Morrison, I. Hutchings, W.I. Milne, J. Robertson. J. Appl. Phys., 90, 5002 (2001)
  10. A.C. Ferrari, J. Robertson. Philos. Trans. R. Soc. Ser. A, 362, 2267 (2004)
  11. P.B. Griffin, J.D. Plummer, M.D. Deal. Silicon VLSI Technology: Fundamentals, Practice, and Modeling (Prentice Hall, NY., 2000)
  12. H.S. Nalwa (ed.). Silicon Based Materials and Devices (Academic Press, NY., 2001)
  13. O. Kordina, L.O. Bjorketun, A. Herry, C. Hallin, R.C. Glass, L. Hultman, J.E. Sundgren, E. Janzen. J. Cryst. Growth, 154, 303 (1995)
  14. M.J. Pelletier. Analytical Applications of Raman Spectroscopy (Blackwell Science, UK, 1999)
  15. T.S. Perova, J. Wasyluk, S. A. Kukushkin, A.V. Osipov, N.A. Feoktistov, S.A. Grudinkin. Nanoscale Res. Lett., 5, 1507 (2010). DOI: 10.1007/s11671-010-9670-6
  16. Y. Cheng, X. Huang, Z. Du, J. Xiao. Opt. Mater., 73, 723 (2017)
  17. W. Yizhe, T. Zha-ma, Y. Zhenming, S. Hui, G. Jianhong, J. Gao. Chin. J. Phys., 64,79 (2020). https://doi.org/10.1016/j.cjph.2020.01.006
  18. M. Qi, J. Xiao, Y. Cheng, Z. Wang, A. Jiang, Y. Guo, Z. Tao. AIP Adv., 7, 085012 (2017)
  19. I.V. Mirgorodskiy, L.A. Golovan, V.Yu. Timoshenko, A.V. Semenov, V.M. Puzikov. Semiconductors, 48 (6), 711 (2014). https://doi.org/10.1134/S1063782614060207
  20. M. Touzin, D. Goeriot, C. Guerret-Piecort, D. Juve, D. Treheux, H.-J. Fitting. J. Appl. Phys., 99, 114110 (2006)
  21. A.I. Ignatiev, A.V. Naschekin, D.M. Nevedomsky, O.A. Podsvirov, A.I. Sidorov, A.P. Soloviev, O.A. Usov. Techn. Phys., 56 (5), 662 (2011). https://doi.org/10.1134/S1063784211050148
  22. N. Jiang, J. Qiu, J.C.H. Spence. Appl. Phys. Lett., 86, 143112 (2005)
  23. O.A. Podsvirov, A.I. Sidorov, D.V. Churaev. Tech. Phys., 59 (11), 1674 (2014). https://doi.org/10.1134/S1063784214110218
  24. A.V. Vostokov,I.A. Verzin,A.I. Ignat'ev,O.A. Podsvirov, A.I. Sidorov. Opt. Spectr., 109 (3),366 (2010)
  25. E.S. Bochkareva, N.V. Nikonorov, O.A. Podsvirov, M.A. Prosnikov, A.I. Sidorov, Plasmonics, 11, 241 (2016)
  26. E.S. Bochkareva, A.I. Sidorov, U.V. Yurina, O.A. Podsvirov. Nucl. Instr. Meth. Phys. Res. B, 403, 1 (2017)
  27. E.A. Ilina, A.I. Sidorov, U.V. Yurina, O.A. Podsvirov. Nucl. Instr. Meth. Phys. Res. B, 412, 28 (2017)
  28. A.G. Bagmut,V.M.Beresnev. Phys. Sol. State., 59, 151 (2017)
  29. S.R. Nitul, S.-G. Kim, J.B. Chou, J. Abed, J. Viegas, M. Jouiad. MRS Adv., 1,825 (2015)
  30. T. Bret, T. Hofmann, K. Edinger. Appl. Phys. A, 117, 1607 (2014)
  31. A. Botman, J.J.L. Mulders, C.W. Hagen. Nanotechnol., 20, 372001 (2009)
  32. S.M. Zharkov, L.I. Kveglis, Phys. Sol. Stat., 46,969 (2004)
  33. J. Shim, J.A. Rivera,R. Bashir. Nanoscale, 5, 10887 (2013)
  34. N. Jianga B. Wu, J. Qiu, J.C.H. Spence. Appl. Phys. Lett., 90, 161909 (2007)
  35. A.I. Sidorov, N.S. Zaitsev, O.A. Podsvirov. Phys. B: Cond. Mat., 598, 412439 (2020)
  36. A. Sadezky, H. Muchkenhuber, H. Grothe, R. Niessner, U. Poschl. Carbon, 43, 1731 (2005)
  37. S. Karekin, D. Esmeryan, E.C. Castano, H.A. Bressler, M. Abolghasemibizaki, P.C. Fergusson, A. Roberts, R. Mohammadi. Diamond Related Mater, 75, 58 (2017)
  38. S. Piscanec, A.C. Ferrari, M. Cantoro, S. Hofmann, J.A. Zapien, Y. Lifshitz, S.T. Lee, J. Robertson. Mater. Sci. Eng. C, 23, 931 (2003)
  39. I.G. Aksyanov, I.V. Kul'kova, S.A. Kukushkin, A.V. Osipov, N.A. Feoktistov, M.E. Kompana. Phys. Sol. State, 51, 2469 (2009)
  40. G. Pacchioni, L. Skuja, D.L. Griscom (ed.). Defects in SiO2 and Related Dielectrics: Science and Technology (Springer Dordrecht, 2000), v. 2
  41. A. Quaranta, A. Rahman, G. Mariotto, C. Maurizio, E. Trave, F. Gonella, E. Cattaruzza, E. Gibaudo, J.E. Broquin. J. Phys. Chem. C, 116, 3757 (2012)
  42. A. Osipov, L. Osipova, R. Zainullina. Int. J. Spectrosc. 2015, 572840 (2015)
  43. J. Wasyluk, T.S. Perova, S.A. Kukushkin, A.V. Osipov, N.A. Feoktistov, S.A. Grudinkin, Mater. Sci. Forum, 359-362, 645 (2010)
  44. R.V. Konakova,O.F. Kolomys,O. Okhrimenko,V.V. Strelchuk, E.Yu. Volkov, M.N. Grigoriev, A.M. Svetlichnyi, O.B. Spiridonov. Semiconductors, 47 (6), 812 (2013)
  45. S. Nakashima, H. Harima. Phys. Stat. Sol. A, 162, 39 (1997)
  46. H. Semat, J.R. Albright. Introduction to Atomic and Nuclear Physics (Chapman and Hall, London, 1972)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru