Technical Physics

To authors

Volumes and Issues

2024
- 1 2 3 4 5 6 7 8 9 10
2023
- 1 2 3 4 5 6 7 8 9 10 11 12
2022
- 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Local structure of amorphous (GeTe)_x(Sb₂Te₃) films

Russian version

DOI: 10.21883/TP.2022.11.55175.186-22

Marchenko A.V.

¹, Terukov E.I.

^2,3, Nasredinov F. S.

⁴, Petrushin Yu. A. ¹, Seregin P. P.

¹Herzen State Pedagogical University of Russia, St. Petersburg, Russia
²Ioffe Institute, St. Petersburg, Russia
³St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
⁴Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia

Email: ppseregin@mail.ru

PDF

Abstract
References
Статистика просмотров

By the method of Messbauer spectroscopy on the isotope ¹¹⁹Sn, it was shown that tetravalent germanium atoms in amorphous films (GeTe)_x(Sb₂Te₃) (where x=0.5, 1, 2, 3) form a tetrahedral system of chemical bonds, and in their local environment there are mainly tellurium atoms. In crystalline films (GeTe)_x(Sb₂Te₃) is divalent hexoordinated germanium at positions 4 b of the NaCl type crystal lattice. By the meth-od of Messbauer spectroscopy on ¹²¹Sb and ¹²⁵Te atoms, it was shown that the amorphization of (GeTe)_x(Sb₂Te₃) films does not change the lo-cal environment of antimony and tellurium atoms Keywords: amorphous films, phase memory, Messbauer spectroscopy.

D. Lencer, M. Salinga, M. Wuttig. Adv. Mater., 23, 2030 (2011). DOI:10.1002/adma.201004255
C. Qiao, Y.R. Guo, J.J. Wang, H. Shen, S.Y. Wang, Y.X. Zheng, R.J. Zhang, LY. Chen, C.Z. Wang, K.M. Ho. J. Alloys and Compounds, 774, 748 (2019). DOI:10.1063/5.0067157
B. Zhang, X.P. Wang, Z.J. Shen, X.B. Li, C.S. Wang, Y.J. Chen, J.X. Li, J.X. Zhang, Z. Zhang, S.B. Zhang, X.D. Han. Sci. Rep., 6, 25453 (2016). DOI: 10.1038/srep25453
Xue-Peng Wang, Xian-Bin Li, Nian-Ke Chen, Qi-Dai Chen, Xiao-Dong Han, Shengbai Zhang, Hong-Bo Sun. Acta Mater., 136, 242 (2017). DOI:10.1016%2fj.actamat.2017.07.006\& partner
Z. Sun, S. Kyrsta, D. Music, R. Ahuja, J.M. Schneider. Solid State Commun., 143, 240 (2007). DOI:10.1016/j.ssc.2007.05.018
P. Urban. Cryst. Eng. Comm., 15, 4823 (2013). DOI: 10.1039/C3CE26956F
A. Lotnyk, U. Ross, S. Bernutz, E. Thelander, B. Rauschenbach. Sci. Rep., 6, 26724 (2016). DOI: 10.1038/srep26724
Y. Zheng, Y. Wang, T. Xin, Y. Cheng, R. Huang, P. Liu, M. Luo, Z. Zhang, Z. Song, S. Feng. Commun. Chem., 2, 1 (2019). DOI.org/10.1038/s42004-019-0114-7
A.V. Kolobov, P. Fons, A.I. Frenkel, A.L. Ankudinov, J. Tominga, T. Uruga. Nat. Mater., 3, 703 (2004). DOI: 10.1038/nmat1215
D.A. Baker, M.A. Paesler, G. Lucovsky, S.C. Agarwal, P.C. Taylor. Phys. Rev. Lett., 96, 255501 (2006). DOI:10.1103/PhysRevLett.96.255501
D.A. Baker, M.A. Paesler, G. Lucovsky, S.C. Agarwal, P.C. Taylor, J. Non-Cryst. Solids, 352, 1621 (2006). DOI:10.1016/j.jnoncrysol.2005.11.079
P. Jovari, I. Kaban, J. Steiner, B. Beuneu, A. Schops, M.A. Webb. Phys. Rev. B, 77, 035202 (2008). DOI:10.1103/PhysRevB.77.035202
Z. Sun, J. Zhou, R. Ahuja. Phys. Rev. Lett., 96, 055507 (2006). DOI:10.1103/PhysRevLett.96.055507
M. Jung, H.J. Shin, K. Kim, J.S.Noh, J. Chung. Appl. Phys. Lett., 89, 043503 (2006). DOI:10.1063/1.2236216 89
J.R. Stellhorn, S. Hosokawa, S. Kohara. Analytical Sci., 36, 5 (2020). DOI:10.2116/analsci.19SAR02
A.V. Marchenko, P.P. Seregin, E.I. Terukov, K.B. Shakhovich. Semiconductors, 53, 711 (2019). DOI: 10.1134/S1063782619050166
P.P. Seregin, V.P. Sivkov, F.S. Nasredinov, L.N. Vasilev, Yu.V. Krylnikov, Y.P. Kostikov. Phys. Stat. Sol. (a), 39, 437 (1977).
G.A. Bordovsky, A.V. Marchenko, F.S. Nasredinov, Y.A. Petrushin, P.P.Seregin. FKhS, 47, 179 (2021). DOI: 10.31857/S0132665121020037 [G.A. Bordovskii, A.V. Marchenko, F.S. Nasredinov, Ya.A. Petrushin, P.P. Seregin. Glass Phys. Chem., 47, 166 (1921). DOI: 10.1134/S1087659621020036]
A.V. Marchenko, E.I. Terukov, F.S. Nasredinov, Y.A. Petrushin, P.P. Seregin. FTP, 55, 3 (2021). DOI: 10.21883/TP.2022.11.55175.186-22 [A.V. Marchenko, E.I. Terukov, F.S. Nasredinov, Ya.A. Petrushin. Semiconductors, 55, 1 (1921). DOI: 10.1134/S1063782621010127]
F. Ledda, C. Muntoni, A. Rucci, S. Serci, G. Alonzo, M. Consiglio, T. Bressani. Hyperfine Interactions, 41, 591, (1988)
S. Rigamonti, G. Petrini. Phys. Stat. Sol. (a), 41, 591 (1970)
G.A. Bordovsky, E.I. Terukov, N.I. Anisimova, A.V. Marchenko, P.P. Seregin. FTP 43, 1232 (2009). [G.A. Bordovskii, E.I. Terukov., N.I. Anisimova, A.V. Marchenko, P.P. Seregin. Semiconductors, 43, 1193 (2009). DOI: 10.1134/S1063782609090164]
M. Micoulaut, K. Gunasekera, S. Ravindren, P. Boolchand. Phys. Rev. B, 90, 094207 (2014). DOI:10.1103/PhysRevB.90.094207
P. Boolchand, B.B. Triplett, S.S. HannaS. Mossbauer Effect Methodology (New England Nuclear Corporation, 1974)
M.K. Gauer, I. Dezsi, U. Gonser, G. Langouche, H. Ruppersberg. J. Non-Cryst. Solids, 101, 31 (1988). DOI:10.1016/0022-3093(88)90365-1
M.K. Gauer, I. Dezsi, U. Gonser, G. Langouche, H. Ruppersberg. J. Non-Cryst. Solids, 109, 247 (1989). DOI:10.1016/0022-3093(88)90365-1
R. Mantovan, R. Fallica, A. Mokhles Gerami, T.E. Molhol, C. Wiemer, M. Longo, H.P. Gunnlaugsson, K. Johnston, H. Masenda, D. Naidoo, M. Ncube, K. Bharuth-Ram, M. Fanciulli, H.P. Gislason, G. Langouche, S. Glafsson, G. Weyer. Scientific Rep., 7, 8234 (2017). DOI:10.1038/s41598-017-08275-5
R.W. Olesinski, G.J. Abbaschian. Bulletin of Alloy Phase Diagrams, 5,265 (1984)
T. Chattopadhyay, J.X. Boucherle, H.G. von Schnering. J. Phys. C, 20, 1431 (1987)
K. Bobokhuzhaev, A. Marchenko, P. Seregin. Structural and Anti-Structural Defects in Chalcogenide Semiconductors. Mossbauer Spectroscopy (LAP Lambert Academic Publishing, 2020)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Institute Officers:

Contact us: