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Detection and study of 60o-rotation domains in α-Ga2O3 using transmission electron microscopy
Russian version
DOI: 10.21883/PSS.2023.01.54972.463
Myasoedov A. V.1, Pavlov I. S.2, Pechnikov A. I.1,3, Nikolaev V. I.1,3
1Ioffe Institute, St. Petersburg, Russia
2Shubnikov Institute of Crystallography “Crystallography and Photonics”, Russian Academy of Sciences, Moscow, Russia
3Perfect Crystals LLC, Saint-Petersburg, Russia
Email: amyasoedov88@gmail.com, ispav88@gmail.com
PDF
The conditions have been established for detection and recognition of rotation domains in α-Ga2O3/α-Al2O3 (0001) thin films in the presence of other polymorphs. The domains are visualized by high-resolution transmission electron microscopy. Their structural characteristics are determined by preparing cross-sectional and plan-view specimens, choosing the correct diffraction conditions and proper imaging modes. As a result, the dimensions, the spatial distribution, the volume fraction and area fraction of the inclusions of domains have been determined. Keywords: structural defects, rotational domains, transmission electron microscopy, gallium oxide.
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