Technical Physics
To authors
Method for Obtaining Atomically Smooth Substrates from Single-Crystal Silicon by Mechanical Lapping
N.I. Chkhalo1, A.A. Akhsakhalyan1, M.V. Zorina1, M.N. Toropov1, Yu.M. Tokunov2
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Moscow Institute of Physics and Technology, Dolgoprudny, Moscow oblast, Russia
2Moscow Institute of Physics and Technology, Dolgoprudny, Moscow oblast, Russia
Email: chkhalo@ipmras.ru
The paper reports on the developed technique for polishing single-crystal silicon substrates using a mechanical lap. The effective substrate roughness was obtained in the spatial frequency range of 0.025-65 μm-1 at the level of 0.37 nm and 0.18 nm at a frame size on the surface of 2x2 μm2. The result obtained is comparable with the results of chemical-mechanical and dynamic polishing of single-crystal silicon wafers for microelectronics. Keywords: Surface, roughness, synchrotron radiation, polishing.
- D.H. Bilderback, A.K. Freund, G.S. Knapp, D.M. Mills. J. Synchrotron Rad., 7, 53 (2000). DOI: 10.1107/S0909049500000650
- H. Thiess, H. Lasser, F. Siewert. Nucl. Instrum. Meth. A, 616, 157 (2010). DOI: 10.1016/j.nima.2009.10.077
- N.I. Chkhalo, A.A. Akhsakhalyan, Yu.A. Weiner, M.V. Zorina, A.E. Pestov, M.V. Svechnikov, M.N. Toropov, N. Kumar, Yu.M. Tokunov. ZhTF, 91 (10), 1588 (2021). (in Russian). DOI: 10.21883/JTF.2021.10.51375.95-21
- Siltronix. Silicon wafer specifications [Electronic resource] Available at: https://www.sitronics-st.com/en/silicon-wafer/silicon-wafer-specifications, free. (date of request: 26.05.2022)
- K. Yamauchi, H. Mimura, K. Inagaki, Y. Mori. Rev. Sci. Instrum., 73, 4028 (2002). DOI: 10.1063/1.1510573
- N.I. Chkhalo, I.V. Malyshev, A.E. Pestov, V.N. Polkovnikov, N.N. Salashchenko, M.N. Toropov. UFN, 190 (1), 74 (2020) (in Russian). DOI: 10.3367/UFNr.2019.05.038601
- A.D. Akhsakhalyan, E.B. Klyuenkov, A.Ya. Lopatin, V.I. Luchin, A.N. Nechai, A.E. Pestov, V.N. Polkovnikov, N.N. Salashchenko, M.V. Svechnikov, M.N. Toropov, N.N. Tsybin, N.I. Chkhalo, A.V. Shcherbakov. Poverkhnost'. Rentgenovskie, sinkhrotronnye i nejtronnye issledovaniya, 1, 5 (2017). (in Russian). DOI: 10.7868/S0207352817010048
- Y. Huang, B. Fan, Y. Wan, S. Li. Optik, 172, 540 (2018). https://doi.org/10.1016/j.ijleo.2018.07.039
- K.N. Khatri, R. Sharma, V. Mishra, H. Garg, V. Karar. Adv. Mater. Proc., 2 (7), 425 (2017). DOI: 10.5185/amp.2017/704
- U. Dinger, F. Eisert, H. Lasser, M. Mayer, A. Seifert, G. Seitz, S. Stacklies, F.-J. Stickel, M. Weiser. Proc. SPIE, 4146, 35 (2000). DOI:10.1117/12.406674
- M.N. Toropov, A.A. Akhsakhalyan, M.V. Zorina, N.N. Salashchenko, N.I. Chkhalo, Yu.M. Tokunov. ZhTF., 90 (11), 1958 (2020). (in Russian). DOI: 10.21883/JTF.2020.11.49990.127-20
- N.I. Chkhalo, N.N. Salashchenko, M.V. Zorina. Rev. Sci. Instrum., 86, 016102 (2015). https://doi.org/10.1063/1.4905336
- M.M. Barysheva, Yu.A. Vainer, B.A. Gribkov, M.V. Zorina, A.E. Pestov, N.N. Salashchenko, R.A. Khramkov, N.I. Chkhalo. Bull. Rus. Acad. Sci. Phys., 76 (2), 163-167 (2012). DOI: 10.3103/S1062873812020037
- N.I. Chkhalo, S.A. Churin, A.E. Pestov, N.N. Salashchenko, Yu.A. Vainer, M.V. Zorina. Opt. Express, 22 (17), 20094 (2014). DOI: 10.1364/OE.22.020094
- M.S. Mikhailenko, A.E. Pestov, N.I. Chkhalo, M.V. Zorina, A.K. Chernyshev, N.N. Salashchenko, I.I. Kuznetsov. Appl. Opt., 61 (10), 2825 (2022). DOI: 10.1364/AO.455096
- L.N. Abdulkadir, K. Abou-El-Hossein, A.I. Jumare, P.B. Odedeyi, M.M. Liman, T.A. Olaniyan. Int. J. Adv. Manuf. Technol., 96, 173-208 (2018). DOI: 10.1007/s00170-017-1529-x
- A.R. Belure, A.K. Biswas, D. Raghunathan, Rishipal, S. Bhartiya, R. Singh, S.K. Raid, R.S. Pawade, M.P. Kamath, N.S. Benerji. Mater. Today Proc., 26, 2260 (2020). DOI: 10.1016/j.matpr.2020.02.490/
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.
