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Method for Obtaining Atomically Smooth Substrates from Single-Crystal Silicon by Mechanical Lapping
The paper reports on the developed technique for polishing single-crystal silicon substrates using a mechanical lap. The effective substrate roughness was obtained in the spatial frequency range of 0.025-65 μm-1 at the level of 0.37 nm and 0.18 nm at a frame size on the surface of 2x2 μm2. The result obtained is comparable with the results of chemical-mechanical and dynamic polishing of single-crystal silicon wafers for microelectronics. Keywords: Surface, roughness, synchrotron radiation, polishing.
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