Technical Physics
To authors
Volumes and Issues
- 2023
- 2022
Method for Obtaining Atomically Smooth Substrates from Single-Crystal Silicon by Mechanical Lapping
The paper reports on the developed technique for polishing single-crystal silicon substrates using a mechanical lap. The effective substrate roughness was obtained in the spatial frequency range of 0.025-65 μm-1 at the level of 0.37 nm and 0.18 nm at a frame size on the surface of 2x2 μm2. The result obtained is comparable with the results of chemical-mechanical and dynamic polishing of single-crystal silicon wafers for microelectronics. Keywords: Surface, roughness, synchrotron radiation, polishing.
- D.H. Bilderback, A.K. Freund, G.S. Knapp, D.M. Mills. J. Synchrotron Rad., 7, 53 (2000). DOI: 10.1107/S0909049500000650
- H. Thiess, H. Lasser, F. Siewert. Nucl. Instrum. Meth. A, 616, 157 (2010). DOI: 10.1016/j.nima.2009.10.077
- N.I. Chkhalo, A.A. Akhsakhalyan, Yu.A. Weiner, M.V. Zorina, A.E. Pestov, M.V. Svechnikov, M.N. Toropov, N. Kumar, Yu.M. Tokunov. ZhTF, 91 (10), 1588 (2021). (in Russian). DOI: 10.21883/JTF.2021.10.51375.95-21
- Siltronix. Silicon wafer specifications [Electronic resource] Available at: https://www.sitronics-st.com/en/silicon-wafer/silicon-wafer-specifications, free. (date of request: 26.05.2022)
- K. Yamauchi, H. Mimura, K. Inagaki, Y. Mori. Rev. Sci. Instrum., 73, 4028 (2002). DOI: 10.1063/1.1510573
- N.I. Chkhalo, I.V. Malyshev, A.E. Pestov, V.N. Polkovnikov, N.N. Salashchenko, M.N. Toropov. UFN, 190 (1), 74 (2020) (in Russian). DOI: 10.3367/UFNr.2019.05.038601
- A.D. Akhsakhalyan, E.B. Klyuenkov, A.Ya. Lopatin, V.I. Luchin, A.N. Nechai, A.E. Pestov, V.N. Polkovnikov, N.N. Salashchenko, M.V. Svechnikov, M.N. Toropov, N.N. Tsybin, N.I. Chkhalo, A.V. Shcherbakov. Poverkhnost'. Rentgenovskie, sinkhrotronnye i nejtronnye issledovaniya, 1, 5 (2017). (in Russian). DOI: 10.7868/S0207352817010048
- Y. Huang, B. Fan, Y. Wan, S. Li. Optik, 172, 540 (2018). https://doi.org/10.1016/j.ijleo.2018.07.039
- K.N. Khatri, R. Sharma, V. Mishra, H. Garg, V. Karar. Adv. Mater. Proc., 2 (7), 425 (2017). DOI: 10.5185/amp.2017/704
- U. Dinger, F. Eisert, H. Lasser, M. Mayer, A. Seifert, G. Seitz, S. Stacklies, F.-J. Stickel, M. Weiser. Proc. SPIE, 4146, 35 (2000). DOI:10.1117/12.406674
- M.N. Toropov, A.A. Akhsakhalyan, M.V. Zorina, N.N. Salashchenko, N.I. Chkhalo, Yu.M. Tokunov. ZhTF., 90 (11), 1958 (2020). (in Russian). DOI: 10.21883/JTF.2020.11.49990.127-20
- N.I. Chkhalo, N.N. Salashchenko, M.V. Zorina. Rev. Sci. Instrum., 86, 016102 (2015). https://doi.org/10.1063/1.4905336
- M.M. Barysheva, Yu.A. Vainer, B.A. Gribkov, M.V. Zorina, A.E. Pestov, N.N. Salashchenko, R.A. Khramkov, N.I. Chkhalo. Bull. Rus. Acad. Sci. Phys., 76 (2), 163-167 (2012). DOI: 10.3103/S1062873812020037
- N.I. Chkhalo, S.A. Churin, A.E. Pestov, N.N. Salashchenko, Yu.A. Vainer, M.V. Zorina. Opt. Express, 22 (17), 20094 (2014). DOI: 10.1364/OE.22.020094
- M.S. Mikhailenko, A.E. Pestov, N.I. Chkhalo, M.V. Zorina, A.K. Chernyshev, N.N. Salashchenko, I.I. Kuznetsov. Appl. Opt., 61 (10), 2825 (2022). DOI: 10.1364/AO.455096
- L.N. Abdulkadir, K. Abou-El-Hossein, A.I. Jumare, P.B. Odedeyi, M.M. Liman, T.A. Olaniyan. Int. J. Adv. Manuf. Technol., 96, 173-208 (2018). DOI: 10.1007/s00170-017-1529-x
- A.R. Belure, A.K. Biswas, D. Raghunathan, Rishipal, S. Bhartiya, R. Singh, S.K. Raid, R.S. Pawade, M.P. Kamath, N.S. Benerji. Mater. Today Proc., 26, 2260 (2020). DOI: 10.1016/j.matpr.2020.02.490/
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.