Section methods of X-Ray diffraction topography
I.L. Shul’pina1, E.V. Suvorov2, I.A. Smirnova2, T.S. Argunova1
1Ioffe Institute, St. Petersburg, Russia
2Osipyan Institute of Solid State Physics RAS Russian Academy of Sciences Chernogolovka, Moscow District, Russia
Email: argunova@mail.ioffe.ru

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X-ray topography is a group of methods for obtaining diffraction images of structural defects in crystals. Among them, section topography techniques are distinguished by their abilities in acquiring quantitative information about defects based on the analysis of the images. For this purpose, special applications of the dynamic theory of X-ray diffraction are being developed. The interference of wave fields excited in a crystal by an X-ray beam is the basis of the section methods. Their sensitivity to weak lattice distortions is much higher than that of other X-ray methods. This review describes the physical foundations and implementation of the section topography techniques, as well as the results of computer simulating the wave field in a crystal. We present some examples of solving materials science and microelectronics problems and briefly describe the section topography using synchrotron radiation. Keywords: X-ray topography, single crystals, defects in crystals, silicon, diamond, indium antimonide.
  1. W. Berg. Naturwissenschaften, 19, 391 (1931). DOI: 10.1007/BF01522358
  2. W. Berg. Z. Kristallogr., 89, 286 (1934). DOI: 10.1524/zkri.1934.89.1.286
  3. A.R. Lang. Acta Metall., 5 (7), 358 (1957). DOI: 10.1016/0001-6160(57)90002-0
  4. V.G. Kohn, A. Kazimirov. Phys. Rev. B, 75 (22), 224119 (2007). DOI:10.1103/PhysRevB.75.224119
  5. V.V. Lider. Phys. Solid State, 63 (2), 189 (2021). DOI: 10.1134/S1063783421020141
  6. V.V. Aristov, V.G. Kohn, V.I. Polovinkina, A.A. Snigirev. Phys. Status Solidi A, 72 (2), 483 (1982). DOI: 10.1002/pssa.2210720207
  7. V.L. Indenbom, F.N. Chukhovsky. UFN, 107(2), 229 (1972) (in Russian). DOI:10.3367/UFNr.0107.197206c.0229
  8. E.V. Suvorov, I.A. Smirnova. UFN, 185(9), 897 (2015) (in Russian). DOI:10.3367/UFNr.0185.201509a.0897
  9. S. Takagi. Acta Crystallogr., 15, 1311 (1962). DOI: 10.1107/S0365110X62003473
  10. S. Takagi. J. Phys. Soc. Jpn., 26 (5), 1239 (1969). DOI: 10.1143/JPSJ.26.1239
  11. D. Taupin. Bull. Soc. Franc. Mineral. Crystallogr., 87, 469 (1964)
  12. D. Taupin. Acta Crystallogr., 23, 25 (1967). DOI: 10.1107/S0365110X67002063
  13. A. Authier. A Dynamical Theory of X-Ray Diffraction (Science Publ., Oxford, 2001)
  14. Y. Ando, J.R. Patel, N. Kato. J. Appl. Phys., 44 (10), 4405 (1973). DOI: 10.1063/1.1661973
  15. E.V. Suvorov, V.I. Polovinkina, V.I. Nikitenko, V.L. Indenbom. Phys. Status Solidi A, 26 (1), 385 (1974). DOI: 10.1002/pssa.2210260140
  16. A.M. Afanas'ev, V.G. Kohn. Acta Crystallogr. A, 27, 421 (1971). DOI:10.1107/S0567739471000962
  17. J. Hartwig. J. Phys. D: Appl. Phys., 34 (10A), A70 (2001). DOI:10.1088/0022-3727/34/10a/315
  18. N. Kato. Acta Crystallogr., 14, 526 (1961). DOI: 10.1107/S0365110X61001625
  19. N. Kato. J. Appl. Phys., 39 (5), 2225 (1968). DOI: 10.1063/1.1656535
  20. T. Uragami. J. Phys. Soc. Jap., 27 (1), 147 (1969). DOI: 10.1143/JPSJ.27.147
  21. E.V. Shulakov, I.A. Smirnova. Poverkhnost, 1, 96 (2001) (in Russian)
  22. A.R. Lang, M. Zhen-Hong. Proc. Roy. Soc A, 368, 313 (1979). DOI:10.1098/rspa.1979.0132
  23. F.N. Chukhovskii, K.T. Gabrielan, P.V. Petrashen. Acta Crystallogr. A, 34, 610 (1978). DOI: 10.1107/S056773947800128X
  24. A. Authier. J.R. Patel. Phys. Status Solidi A, 27 (1), 213 (1975). DOI:10.1002/pssa.2210270125
  25. A. Authier. Bull. Soc. Franc. Mineral. Crystallogr., 84 (1), 51 (1961)
  26. F. Balibar, A. Authier. Phys. Status Solidi B, 21 (1), 413 (1967). DOI:10.1002/pssb.19670210141
  27. A. Authier. Adv. X-Ray Analysts, 10, 9 (1967)
  28. Y. Epelboin, A. Authier. Acta Crystallogr. A, 39, 767 (1983). DOI:10.1107/S010876738300152X
  29. V.N. Erofeev, V.I. Nikitenko, V.I. Polovinkina, E.V. Suvorov. Kristallografiya, 16 (1), 190 (1971) (in Russian).
  30. E.V. Suvorov, O.S. Gorelik, V.M. Kaganer, V.L. Indenbom. Phys. Status Solidi A, 54 (1), 29 (1979). DOI: 10.1002/pssa.2210540103
  31. E.V. Suvorov, I.A. Smirnova. Phys. Solid State, 52 (12), 2485 (2010). DOI: 10.1134/S1063783410120073
  32. E.V. Suvorov, I.A. Smirnova, E.V. Shulakov. Poverkhnost, 9, 64 (2004) (in Russian)
  33. E.V. Suvorov, I.A. Smirnova, E.V. Shulakov. Poverkhnost, 4, 100 (2004) (in Russian)
  34. R.N. Kyutt, S.S. Ruvimov, I.L. Shulpina. Tech. Phys. Lett., 32 (12), 1079 (2006). DOI:10.1134/S106378500612025X
  35. M.G. Milvidsky, Yu.A. Osipyan, E.V. Suvorov, I.A. Smirnova, E.V. Shulakov. Poverkhnost, 6, 5 (2001) (in Russian)
  36. I.L. Shulpina, E.V. Suvorov. Bull. Russ. Acad. Sci. Phys., 74 (11), 1488 (2010)
  37. F. Heyroth, H.-R. Hoche, C. Eisenschmidt. J. Appl. Crystallogr., 32, 489 (1999). DOI:10.1107/S002188989900240X
  38. V.G. Kohn, I.A. Smirnova. Acta Crystallogr. A, 71, 519 (2015). DOI:10.1107/S2053273315012176
  39. E.V. Shulakov, I.A. Smirnova, E.V. Suvorov. Poverkhnost, 6, 5 (2003) (in Russian)
  40. P. Zaumseil. Krist. Tech., 13 (8), 983 (1978). DOI: 10.1002/crat.19780130814
  41. I.L. Shulpina, P.V. Petrashen, F.N. Chukhovsky, K.T. Gabrielyan. Tez. dokl. IV Vsesoyuznogo soveschaniya "Defekty struktury v poluprovodnikakh" (Novosibirsk, SSSR, 1984), t. 2, s. 114 (in Russian)
  42. P.V. Petrashen, F.N. Chukhovsky, I.L. Shulpina, R.N. Kyutt. FTT, 29 (5), 1608 (1987) (in Russian)
  43. F.N. Chukhovskii, P.V. Petrashen. Acta Crystallogr. A, 44, 8 (1988). DOI:10.1107/S0108767387005099
  44. E.V. Suvorov, I.A. Smirnova, A.S. Obrazova. Instruments Experiment. Tech., 58 (1), 170 (2015). DOI: 10.1134/S0020441215010297
  45. I.A. Smirnova, E.V. Suvorov, E.V. Shulakov. Phys. Solid State, 53 (1), 35 (2011). DOI:10.1134/S1063783411010288
  46. E.V. Suvorov, I.A. Smirnova. Tech. Phys. Lett., 42 (9), 955 (2016). DOI: 10.1134/S1063785016090261
  47. V.L. Indenbom, F.N. Chukhovsky. Kristallografiya, 16 (6), 1101 (1971) (in Russian)
  48. B.K. Tanner. X-ray Diffraction Topography (Pergamon Press, Oxford, 1976)
  49. S.F. Cui, G.S. Green, B.K. Tanner. Mater. Res. Soc. Symp. Proc., 138, 71 (1989). DOI:10.1557/PROC-138-71
  50. I.L. Shulpina. Poverkhnost, 4, 3 (2000) (in Russian)
  51. S.Yu. Martyushov, N.V. Kornilov, S.N. Polyakov, S.I. Zholudev, A.A. Lomov, I.L. Shulpina. Tez. dokl. 8 Mezhdunar. konf. "Kristallografika i deformatsionnoe povedenie perspektivnykh materialov" (Moskva, Rossiya, 2019), s. 153 (in Russian). DOI: 10.26201/ISSP.2019.45.557/Def.Mater.132
  52. S.N. Polyakov, A.A. Lomov, I.L. Shulpina, S.Yu. Martyushov, V.N. Denisov, V.D. Blank. Tez. dokl. konferentsii "Elektronno-luchevye tekhnologii i rentgenovskaya optika v mikroelektronike" (Chernogolovka, Rossiya, 2021), s. 268 (in Russian)
  53. J.R. Patel. J. Appl. Phys., 44 (9), 3903 (1973). DOI: 10.1063/1.1662869
  54. D.K. Bowen, B.K. Tanner. High Resolution X-ray Diffractometry and Topography (Taylor and Francis, London, 1998)
  55. M. Lefeld-Sosnowska, J. Gronkowski, G. Kowalski. J. Phys. D: Appl. Phys., 28 (4A), A42 (1995). DOI: 10.1088/0022-3727/28/4A/008
  56. P. Klang, V. Holy, J. Kubv ena, R. v Stoudek, J. v Sik. J. Phys. D: Appl. Phys., 38 (10A), A105 (2005). DOI: 10.1088/0022-3727/38/10A/020
  57. S. Rouvimov, R. Kuytt, J. Kearns, V. Todt, B. Orschel, H. Siriwardane, A. Buczkowski, I. Shul'pina, G.A. Rozgonyi. Solid State Phenomena, eds. H. Richter, M. Kittler, 95-96, 17 (2004). DOI: 10.4028/www.scientific.net/SSP.95-96.17
  58. R.N. Kyutt, I.L. Shulpina, G.N. Mosina, V.V. Ratnikov, L.M. Sorokin, M.P. Scheglov, S.S. Ruvimov, J. Kearns, V. Todt. J. Phys. D: Appl. Phys., 38 (10A), A111 (2005). DOI:10.1088/0022-3727/38/10A/021
  59. I.L. Shulpina, S.S. Ruvimov, R.N. Kyutt. Poverkhnost, 1, 38 (2010) (in Russian)
  60. I.L. Shul'pina, R.N. Kyutt, V.V. Ratnikov, I.A. Prokhorov, I.Zh. Bezbakh, M.P. Shcheglov. Tech. Phys., 55 (4) 537 (2010). DOI:10.1134/S1063784210040183
  61. P.V. Petrashen, I.L. Shulpina. Phys. Status Solidi A, 78 (2), K105 (1983)
  62. I.L. Shulpina. Zavodskaya laboratoriya, 73 (5) 30 (2007) (in Russian)
  63. I.L. Shulpina, V.V. Ratnikov, N.S. Savkina, V.B. Shuman, M. Syvajarvi, R. Yakimova. Materials Science Forum, 483-485, ed. R. Nipoti, A. Poggi, A. Scorzoni. Switzerland, Trans Tech Publ. Ltd, 2005, 265-268. DOI: 10.4028/www.scientific.net/MSF.483-485.265
  64. I.L. Shulpina, V.V. Ratnikov, N.S. Savkina, V.B. Shuman. Poverkhnost, 6, 18 (2005) (in Russian)
  65. I.N. Leikin, K.L. Golovchiner, T.A. Mingazin. Poverkhnost, 9, 136 (1984) (in Russian)
  66. H. Chen. Mater. Lett., 4 (2), 65 (1986). DOI: 10.1016/0167-577X(86)90051-0
  67. I.L. Shulpina, N.S. Zhdanovich, V.I. Sokolov. Elektronnaya tekhnika, 4 (241), 48 (1989) (in Russian)
  68. W. Wierzhowski, K. Wieteska, W. Graeff. J. Phys. D: Appl. Phys., 33 (10), 1230 (2000). DOI: 10.1088/0022-3727/33/10/314
  69. K. Wieteska, W. Wierzhowski, W. Graeff, M. Lefeld-Sosnowska, M. Regulska. J. Phys. D: Appl. Phys., 36 (10A), A133 (2003). DOI: 10.1088/0022-3727/36/10A/327
  70. J. Riikonen, T. Tuomi, A. Lankinen, J. Sormunen, A. Saynatjoki, L. Knuuttila, H. Lipsanen, P.J. Mcnally, L. O'Reilly, A. Danilewsky, H. Sipila, S.Vaijarvi, D. Lumb, A. Owens. J. Mater. Sci-Mater. El., 16, 449 (2005). DOI: s10854-005-2313-5
  71. D. Noonan, P.J. McNally, W.-M. Chen, A. Lankinen, L. Knuuttila, T.O.Tuomi, A.N. Danilewsky, R. Simon. Microelectr., 37 (11), 1372 (2006). DOI: 10.1016/j.mejo.2006.06.008
  72. E. Pernot, P. Pernot-Rejmankova, M. Anikin, B. Pelissier, C. Moulin, R. Madar. J. Phys. D: Appl. Phys., 34 (10A), A136 (2001). DOI: 10.1088/0022-3727/34/10A/328
  73. J. Baruchel, M. Di Michiel, T. Lafford, P. Lhuissier, J. Meyssonnier, H. Nguyen-Thi, A. Philip, P. Pernot, L. Salvo, M. Scheel. C.R. Physique, 14 (2-3), 208, (2013). DOI:10.1016/j.crhy.2012.10.010
  74. P.G. Neudeck, J.A. Powell. IEEE Electr. Device L., 15 (2), 63 (1994). DOI:10.1109/55.285372
  75. St.G. Muller, M.F. Brady, A.A. Burk, H. Md. Hobgood, J.R. Jenny, R.T. Leonard, D.P. Malta, A.R. Powell, J.J. Sumakeris, V.F. Tsvetkov, C.H. Carter. Superlattice Microst., 40 (4-6), 195 (2006). DOI: 10.1016/j.spmi.2006.09.029
  76. P.J. Wellmann. Semicond. Sci. Technol., 33, 103001 (1-34) (2018). DOI:10.1088/1361-6641/aad831
  77. D. Nakamura, S. Yamaguhi, Y. Hirose, T. Tani, K. Takatori. J. Appl. Phys., 103 (1), 013510 (1-7) (2008). DOI: 10.1063/1.2829806
  78. D. Nakamura, I. Gunjishima, S. Yamaguhi, T. Ito, A. Okamoto, H. Kondo, S. Onda, K. Takatori. Nature, 430, 1009 (2004). DOI: 10.1038/nature02810
  79. W. Si, M. Dudley, R. Glass, V.Tsvetkov, C. Carter. J. Eletron. Mater., 26, 128 (1997). DOI:10.1007/s11664-997-0138-0
  80. S. Mardix , A. R. Lang, I. Blech. Phil. Mag., 24, 683 (1971). DOI:10.1080/14786437108217039
  81. H. Yan, O. Kalenci, I.C. Noyan. Appl. Crystallogr., 40, 322 (2007). DOI:10.1107/S0021889807003160
  82. T. Fukamachi, S. Jongsukswat, D. Ju, R. Negishi, K. Hirano, T. Kawamura. Acta Crystallogr. A, 75, 842 (2019). DOI: 10.1107/S2053273319011859
  83. M.B. Kosmyna, B.P. Nazarenko, V.M. Puzikov, A.N. Shekhovtsov, W. Paszkowicz, A. Behrooz, P. Romanowski, A.S. Yasukevich, N.V. Kuleshov, M.P. Demesh, W. Wierzchowski, K. Wieteska, C. Paulmann. J. Cryst. Growth, 445, 101, (2016). DOI:10.1016/j.jcrysgro.2016.04.002
  84. W. Wierzchowski, K. Wieteska, J. Gaca, M. Wojcik, M. Mozdzonek, W. Strupinski, M. Weso owski, C. Paulmann. J. Appl. Crystallogr., 50, 1192 (2017). DOI:10.1107/S1600576717008846
  85. B.K. Tanner, P.J. McNally, A.N. Danilewsky. Powder Diffr., 36 (2), 78 (2021). DOI:10.1017/S088571562100021X
  86. W. Ludwig, P. Cloetens, J. Hartwig, J. Baruchel, B. Hamelin, P. Bastie. J. Appl. Crystallogr., 34, 602 (2001). DOI: 10.1107/S002188980101086X
  87. S. Kawado, T. Taishi, S. Iida, Y. Suzuki, Y. Chikaura, K. Kajiwara. J. Synchrotron Rad., 11, 304 (2004). DOI: 10.1107/S0909049504012609
  88. T. Mukaide, K. Kajiwara, T. Noma, K. Takada. J. Synchrotron Rad., 13, 484 (2006). DOI: 10.1107/S090904950603384X
  89. V.V. Kvardakov, K.M. Podurets, S.A. Schetinkin, J. Baruchel, J. Hartwig, M. Schlenker. Nucl. Instrum. Meth. Phys. Res. A, 575 (1-2), 140 (2007). DOI: 10.1016/j.nima.2007.01.044
  90. K. Kajiwara, S. Kawado, S. Iida, Y. Suzuki, Y. Chikaura. Phys. Status Solidi A, 204 (8), 2682 (2007). DOI: 10.1002/pssa.200675677
  91. A.E. Voloshin, I.L. Smol'skii, V.N. Rozhanskij. ZhTF, 64(4), 171 (1992) (in Russian)
  92. A.E. Voloshin, I.L. Smolsky, V.M. Kaganer, V.L. Indenbom, V.N. Rozhansky. Phys. Status Solidi A, 130 (1), 61 (1992). DOI: 10.1002/pssa.2211300108
  93. A.E. Voloshin. Cryst. Rep. 56 (5) 802 (2011). DOI: 10.1134/S1063774511050233
  94. I.L. Smolsky, A.E. Voloshin, N.P. Zaitseva, E.B. Rudneva, H. Klapper. Philos. Tr. Soc. Lond, A. 357, 2631 (1999). DOI: 10.1098/rsta.1999.0453
  95. V. Asadchikov, A. Buzmakov, F. Chukhovskii, I. Dyachkova, D. Zolotov, A. Danilewsky, T. Baumbach, S. Bode, S. Haaga, D. Hanschke, M. Kabukcuoglu, M. Balzer, M. Caselle, E.Suvorov. J. Appl. Cryst., 51, 1616 (2018). DOI: 10.1107/S160057671801419X

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