Physics of the Solid State
Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon
Zikrillaev N. F.1, Koveshnikov S. V.1, Kh.S. Turekeev Kh. S.1, Norqulov N.2, Tachilin S. A.1
1Tashkent State Technical University, Tashkent, Uzbekistan
2Mirzo Ulug’bek National University of Uzbekistan, Tashkent, Uzbekistan
2Mirzo Ulug’bek National University of Uzbekistan, Tashkent, Uzbekistan
Email: axmet-8686@mail.ru
Diffusion from a layer of gallium phosphide GaP deposited onto a silicon surface was studied. After diffusion, the silicon samples were examined by the Van der Pauw method, and a scanning electron microscope was used to determine the concentration distribution of phosphorus and gallium atoms impurity. Keywords: diffusion, gallium phosphide, silicon, solubility, concentration, binary complexes.
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