Physics of the Solid State
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Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon
Diffusion from a layer of gallium phosphide GaP deposited onto a silicon surface was studied. After diffusion, the silicon samples were examined by the Van der Pauw method, and a scanning electron microscope was used to determine the concentration distribution of phosphorus and gallium atoms impurity. Keywords: diffusion, gallium phosphide, silicon, solubility, concentration, binary complexes.
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