Space-charge-limited carrier localization in InGaN/GaN quantum wells
Bochkareva N.I.1, Shreter Y.G.1
1Ioffe Institute, St. Petersburg, Russia
Email: n.bochkareva@mail.ioffe.ru

PDF
The mechanism of carrier tunneling through the potential walls of InGaN/GaN quantum well in the p-n-structures is studied by means of the deep center tunneling spectroscopy. A number of humps on the current and photocurrent tunneling spectra, as well as on the forward bias dependences of the intensity and the peak energy of photoluminescence band from the quantum well are detected. These findings allow us to propose a model of carrier localization in the quantum well that permit to relate the tunneling transparency of the potential walls of the QW to the space-charge of deep-level centers in the quantum well barriers and its changes under optical excitation and forward biasing of p-n-structure. Keywords: gallium nitride, quantum well, photoluminescence, deep center tunneling spectroscopy, impurity color centers.
  1. S. Nakamura, G. Fasol. The Blue Laser Diode: GaN Based Light Emitters and Lasers. Springer, Berlin, N. Y. (1998). 343 p
  2. D. Feezell, S. Nakamura. C.R. Phys. 19, 3, 113 (2018)
  3. C.H. Qiu, C. Hoggatt, W. Melton, M.W. Leksono, J.I. Pankove. Appl. Phys. Lett. 66, 20, 2712 (1995)
  4. P. Perlin, M. Osinski, P.G. Eliseev, V.A. Smagley, J. Mu, M. Banas, P. Sartori. Appl. Phys. Lett. 69, 12, 1680 (1996)
  5. J.R. Lang, N.G. Young, R.M. Farrell, Y.R. Wu, J.S. Speck. Appl. Phys. Lett. 101, 181105 (2012)
  6. H. Zhang, E.J. Miller, E.T. Yu. J. Appl. Phys. 99, 023703 (2006)
  7. L. Esaki. In: Tunneling phenomena in solid states (Tunnel'nyye yavleniya v tverdykh telakh) / Ed. V.I. Perel'. Mir, M. (1973). P. 51. (in Russian). [Tunneling phenomena in solids / Ed. E. Burstain, S. Lundqvist. Plenium Press, N. Y. (1969)]
  8. N. Holonyak. J. Appl. Phys. 32, 1, 130 (1961)
  9. A.G. Chynoweth, W.L. Feldmann, R.A. Logan. Phys. Rev. 121, 3, 684 (1961)
  10. A.A. Klochikhin, S.A. Permogorov, A.N. Reznitsky. Physics of the Solid State 39, 7, 1170 (1997)
  11. S.F. Chichibu, Y. Kawakami, T. Sota. In: Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes / Ed. S. Naramura, S.F. Chichibu. Taylor \& Francis, London--N. Y. (2000). 372 p
  12. R.J. Molnar, T. Lei, T.D. Moustakas. Appl. Phys. Lett. 62, 1, 72 (1993)
  13. N.I. Bochkareva, A.M. Ivanov, A.V. Klochkov, Y.G. Shreter. J. Phys.: Conf. Ser. 1697, 012203 (2020)
  14. M.A. Reshchikov, H.J. Morkoc. Appl. Phys. 97, 061301 (2005)
  15. Y.T. Rebane, N.I. Bochkareva, V.E. Bougrov, D.V. Tarkhin, Y.G. Shreter, E.A. Girnov, S.I. Stepanov, W.N. Wang, P.T. Chang, P.J. Wang. Proc. SPIE 4996, 113 (2003)
  16. L.V. Keldysh. Journal of Experimental and Theoretical Physics 33, 4, 994 (1957); 34, 4, 962 (1958)
  17. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, T. Mukai. Jpn. J. Appl. Phys. Part 2 34, L1332 (1995)
  18. N.G. Young, R.M. Farrell, Y.L. Hu, Y. Terao, M. Iza, S. Keller, S.P. DenBaars, S. Nakamura, J.S. Speck. Appl. Phys. Lett. 103, 173903 (2013)
  19. N. Holonyak, Jr., D.L. Keune, R.D. Burnham, C.B. Duke. Phys. Rev. Lett. 24, 11, 589 (1970)
  20. N.F. Mott, E.A. Davis. Electronic processes in Non-Crystalline Materials. Clarendon Press, Oxford (1979)
  21. D. Monroe. Phys. Rev. Lett. 54, 2, 146 (1985)
  22. S.F. Chichibu, A. Uedono, K. Kojima, H. Ikeda, K. Fujito, S. Takashima, M. Edo, K. Ueno, S. Ishibashi. J. Appl. Phys. 123, 161413 (2018)
  23. N.I. Bochkareva, I.A. Sheremet, Yu.G. Shreter. Semiconductors 50, 10, 1387 (2016)
  24. D.M. Hofmann, D. Kovalev, G. Steude, B.K. Meyer, A. Hoffmann, L. Esckey, R. Heitz, T. Detchprom, H. Amano, I. Akasaki. Phys. Rev. B 52, 16702 (1995)
  25. M.A. Reshchikov, D.O. Demchenko, J.D. McNamara, S. Fernandes-Carrido, R. Calargo. Phys. Rev. B 90, 035207 (2014)
  26. E. Gaubas, P. Baronas, T. vCeponis, L. Deveikis, D. Dobrovolskas, E. Kuokstis, J. Mickevivcius, V. Rumbauskas, M. Bockowski, M. Iwinska, T. Sochacki. Mater. Sci. Semicon. Proc. 91, 341 (2019)
  27. G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, T. Jimbo. Appl. Phys. Lett. 70, 24, 3209 (1997)
  28. E.G. Maximov, O.A. Pankratov. Physics-Uspekhi 116, 3, 385 (1975)
  29. D.L. Gricom. J. Appl. Phys. 58, 7, 2524 (1985)
  30. M.A. Reshchikov, R.Y. Korotkov. Phys. Rev. B 64, 115205 (2001).

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru