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High-pressures relaxation effects in n-CdAs2
Saypulaeva L. A.
1, Tebenkov A. B.2, Abdulvagidov Sh. B.
1, Alibekov A. G.1, Marenkin S. F.3
1Amirkhanov Institute of Physics, Daghestan Federal Research Center, Russian Academy of Sciences, Makhachkala, Russia
2Institute of Natural Sciences and Mathematics, Ural Federal University, Yekaterinburg, Russia
3Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russia
2Institute of Natural Sciences and Mathematics, Ural Federal University, Yekaterinburg, Russia
3Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russia
Email: l.saypulaeva@gmail.com, av.tebenkov@urfu.ru, abdulvagidovshb@gmail.com
Experimental studies of the baric dependences of the electrical and magnetoresistance of n-CdAs2 at pressures up to 50 GPa and in magnetic fields up to 1 T are reported. High values of negative magnetoresistance (up to 8 %) is shown to form with pressure. Relaxation effects caused by plastic deformation of materials are investigated. Within 25-35 GPa, a significant increase in the relaxation time of electrical resistance is observed, apparently due to an extended metastable states and structural transition type-I. The structural transformation is also reflected in the electronic subsystem, which leads to minima increasing with the magnetic field on the baric dependences of the magnetoresistance. Keywords: high pressure, relaxation effects, electrical resistance, magnetic resistance, magnetic field, phase transitions.
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