Pulse characteristics of single-junction and triple-junction laser photoconverters
Kalinovskii V.S.1, Tolkachev I.A.1, Kontrosh E.V.1, Prudchenko K.K.1, Yuferev V.S.1, Ivanov S.V.1
1Ioffe Institute, St. Petersburg, Russia
Email: vitak.sopt@mail.ioffe.ru, TolkachevIA@mail.ioffe.ru, kontrosh@mail.ioffe.ru, prudchenkokk@mail.ioffe.ru, Valyuf@ammp3.ioffe.ru, Ivan@beam.ioffe.ru

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The pulsed photoresponse characteristics of a single-junction (SJ) and a triple-junction (TJ) monolithic GaAs/AlGaAs p-i-n photoconverters (250 μm) (PCs) in the photovoltaic mode under excitation by pulsed laser irradiation with λ=850 nm were investigated. The peak radiation power density (Pp) was varied up to 9.6 kW/cm2 at a pulse duration of 140 ps. It is shown that the photoresponse pulse broadening for a SJ PCs is due to the influence of the electric field collapse of the p-i-n junction at Pp≥ 1.1 kW/cm2. In the photovoltaic mode, the possibility of increasing the fast performance at Pp up to 9.6 kW/cm2 by using the TJ PCs mounted by vacuum soldering on a ceramic microstrip heat sink base has been demonstrated. Keywords: pulse characteristics, single-junction and triple-junction monolithic p-i-n photoconverters, collapse of the electric field, vacuum soldering.
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