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Photoinduced changes in impedance and conductivity of CuInSe2 films depending on their synthesis technology
Russian version
Romanova O. B. 1, Aplesnin S. S. 1,2, Gadzhiev T. M. 3, Sitnikov M. N.2, Aliev M. A.3, Nikitinsky O. S.2, Udod L. V. 1,2
1Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
2Siberian State University of Science and Technology, Krasnoyarsk, Russia
3Amirkhanov Institute of Physics, Daghestan Federal Research Center, Russian Academy of Sciences, Makhachkala, Russia
Email: rob@iph.krasn.ru, apl@iph.krasn.ru, gadjiev_timur@mail.ru, kineru@mail.ru, aliev_marat@mail.ru, onikitinsky@yandex.ru, luba@iph.krasn.ru
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Using the controlled selenization method, CuInSe2 films with a chalcopyrite structure were synthesized. It was established that the selenization temperature (Tsel) is a critical parameter determining the morphology and electrophysical properties of the films. A nonlinear current-voltage characteristic was found, caused by the electrical inhomogeneity of the material. The optimum Tsel=350 oC was determined, at which the maximum photoelectric effect and the longest relaxation time are observed. At Tsel<300 oC, a photoinduced change in impedance was detected. Keywords: polycrystalline films, electrophysical properties, photoconductivity.
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