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Reliability of MIS structures based on films of barium strontium titanate and hafnium oxide
Afanasyev M. S.
1, Belorusov D. A.
1, Kiselev D. A.
1, Luzanov V. A.
1, Chucheva G. V.
1
1Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia
Email: gvc@fireras.su
Ferroelectric films of barium strontium titanate (BST) and hafnium oxide (HfO2) were synthesized on silicon substrates by high-frequency sputtering and magnetron sputtering, respectively. The results of studies of the structural composition of BST and HfO2 films and the electrophysical properties of metal-insulator-semiconductor (Ni-BST-Si) and (Ni-HfO2-Si) MIS structures based on them are presented. Keywords: ferroelectric films, barium strontium titanate (BST), hafnium oxide (HfO2), metalinsulator-semiconductor (MIS) structures, electrophysical properties.
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