Optics and Spectroscopy
To authors
Volumes and Issues
- 2025
- 2024
- 2023
- 2022
Features of measuring the thermal resistance of a microassembly of high-power gallium nitride HEMTs with a silicon MOSFET connected in a cascode circuit
Smirnov V.I.
1,2, Sergeev V.A.
1, Gavrikov A.A.
1
1Kotel’nikov Institute of Radio Engineering and Electronics (Ulyanovsk Branch), Russian Academy of Sciences, Ulyanovsk, Russia
2Ulyanovsk State Technical University, Ulyanovsk, Russia
2Ulyanovsk State Technical University, Ulyanovsk, Russia
Email: smirnov-vi@mail.ru, sva@ulstu.ru, a.gavrikoff@gmail.com
Thermal electric processes in GaN transistors with a cascode structure consisting of a HEMT and a MOSFET connected in series are investigated. The possibility of determining the HEMT and MOSFET channel resistance based on the results of measuring the current-voltage characteristics of the cascode structure in various switching modes is demonstrated, and estimates of the thermal power dissipated in both crystals are presented. The transistor thermal resistance components were determined using a hardware and software complex implementing a modulation measurement method with heating the object with pulses of a heating current with pulse-width modulation according to the harmonic law. The obtained values of the thermal resistance components are in good agreement with the transistor specifications. Keywords: gallium nitride transistor, cascode structure, HEMT, MOSFET, thermal resistance, modulation method, thermal radiation.
- T.R. Lenka, P.T. Nguyen Hieu. HEMT Technology and Applications (Springer, Singapore, 2022). DOI: 10.1007/978-981-19-2165-0
- F. Oettinger, D. Blackburn. Thermal resistance measurements (Government Printing, U.S., 1990)
- M. Rencz, G. Farkas, A. Poppe. Theory and Practice of Thermal Transient Testing of Electronic Components (Springer, Switzerland, 2023). DOI: 10.1007/978-3-030-86174-2
- A. Strogonov, M. Harchenko, A. Hanin. Elektronika: Nauka. Tekhnologiya. Biznes, 8, 00229, 2023. (in Russian)
- X. Hu, G. Simin, J. Yang. Electron. Lett., 36 (8), 753 (2000). DOI: 10.1049/el:20000557
- X. Huang, W. Du, F.C. Lee, Q. Li, Z. Liu. IEEE Trans. Power Electron., 31 (1), 593 (2015). DOI: 10.1109/TPEL.2015.2398856
- C. Wu et al. Energies, 14 (12), 3477 (2021). DOI: 10.3390/en14123477
- S.M. Sze, M.K. Lee. Physics of Semiconductor Devices (Wiley, 2006)
- G. Farkas, Z. Sarkany, M. Rencz. International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (Nuremberg, Germany, 2016), pp. 1-8. [Electronic source]. URL: https://ieeexplore.ieee.org/document/7499411/metrics\#metrics
- V.I. Smirnov, V.A. Sergeev, A.A. Gavrikov, A.M. Shorin. Microelectronics Reliability, 80, 205-212 (2018). DOI: 10.1016/j.microrel.2017.11.024
- V.I. Smirnov, A.A. Gavrikov. IEEE Trans. Instr. Measur., 73, 1-9 (2024). DOI: 10.1109/TIM.2023.3345913