Effect of Ge nanolayers and quantum dots on photoluminescence properties of GeSiSn/Si MQW heterostructures
Kolyada D. V.1, Firsov D. D.1, Komkov O. S.1, Skvortsov I. V.2, Mashanov V. I.2, Loshkarev I. D.2, Timofeev V. A.2
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
2Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Division, Novosibirsk, Russia
Email: kolyada.dima94@mail.ru, d.d.firsov@gmail.com, okomkov@yahoo.com, i.skvortsov@isp.nsc.ru, mash@isp.nsc.ru, idl@isp.nsc.ru, Vyacheslav.t@isp.nsc.ru
Heterostructures with multiple GeSiSn/Si quantum wells including thin germanium layers, as well as with germanium quantum dots placed on top of the quantum wells, are studied. The heterostructures were grown by molecular beam epitaxy on silicon substrates. Structural studies using the X-ray diffraction method confirmed the elastically stressed state of the layers. Photoluminescence spectroscopy revealed that an increase in the germanium layer thickness leads to a red shift in the emission peak of multiple quantum wells, while the experimental values of the transition energies correlate well with theoretical calculations. The use of germanium quantum dots grown on top of GeSiSn/Si quantum wells enables a further long-wavelength shift of the emission. The obtained results demonstrate the efficiency of fine-tuning the energy spectrum of GeSiSn/Si heterostructures by varying the parameters of Ge layers, and open up prospects for the development of highly efficient infrared emitting devices. Keywords: Multiple quantum wells, Fourier transform infrared spectroscopy, quantum dots, germanium nanolayers, molecular beam epitaxy, X-ray diffraction.
- G. Daligou, R. Soref, Anis Attiaoui, Md.J. Hossain, M.R.M. Atalla, P.D. Vecchio, O. Moutanabbir. IEEE JPV 13, 5, 728 (2023)
- C. Xu, L. Jiang, J. Kouvetakis, J. Menendez. Appl. Phys. Lett. 103, 7, 072111 (2013)
- G. Sun, R. Soref, J. Khurgin, S. Yu, G. Chang. Technical Digest Series (Optica Publishing Group) JW2A119 (2023)
- M.R.M. Atalla, S. Assali, G. Daligou, A. Attiaoui, S. Koelling, P. Daoust, O. Moutanabbir. ACS Photonics 11, 3, 1335 (2024)
- K.L. Low, Y. Yang, G. Han, W. Fan, Y.-C. Yeo. J. Appl. Phys. 112, 10, 103715 (2012)
- M. Oehme, M. Schmid, M. Kaschel, M. Gollhofer, D. Widmann, E. Kasper, J. Schulze. Appl. Phys. Lett. 101, 14, 141110 (2012)
- S. Gupta, B. Magyari-Kope, Y. Nishi, K.C. Saraswat. J. Appl. Phys. 113, 7, 073707 (2013)
- T.R. Harris, M.Y. Ryu, Y.K. Yeo, B. Wang, C.L. Senaratne, J. Kouvetakis. J. Appl. Phys. 120, 8, 085706 (2016)
- S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J.M. Hartmann, H. Sigg, J. Faist, D. Buca, D. Grutzmacher, Nature Photonics 9, 88 (2015)
- A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grutzmacher, M. El Kurdi. Nat. Photonics 14, 375 (2020)
- Y. Zhou, S. Ojo, C.-W. Wu, Y. Miao, H. Tran, J.M. Grant, G. Abernathy, S. Amoah, J. Bass, G. Salamo, W. Du, G.-En Chang, J. Liu, J. Margetis, J. Tolle, Y.-H. Zhang, G. Sun, R.A. Soref, B. Li, S.-Q. Yu. Photon. Res. 10, 1, 222 (2022)
- Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J.M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R.A. Soref, B. Li, S.-Q. Yu. Optica 7, 8, 924 (2020)
- J. Nicolas, S. Assali, S. Mukherjee, A. Lotnyk, O. Moutanabbir. Cryst. Growth Des. 20, 5, 3493 (2020)
- P.R. Pukite, A. Harwit, S.S. Iyer. Appl. Phys. Lett. 54, 21, 2142 (1989)
- J. Xie, A.V.G. Chizmeshya, J. Tolle, V.R. D'Costa, J. Menendez, J. Kouvetakis. Chemistry of Materials 22, 3779 (2010)
- V. Timofeev, A. Nikiforov, A. Tuktamyshev, V. Mashanov, M. Yesin, A. Bloshkin. Nanoscale Res. Lett. 13, 29 (2018)
- S. Assali, J. Nicolas, O. Moutanabbir. J. Appl. Phys. 125, 2, 025304 (2019)
- V. Timofeev, V.I. Mashanov, A.I. Nikiforov, I.D. Loshkarev, I.V. Skvortsov, D.V. Gulyaev, I.V. Korolkov, D.V. Kolyada, D.D. Firsov, O.S. Komkov. Rus. Phys. J. 64, 1505 (2021)
- D.V. Kolyada, D.D. Firsov, V.A. Timofeev, V.I. Mashanov, A.A. Karaborchev, O.S. Komkov. Semiconductors 56, 8, 547 (2022)
- V. Timofeev, I. Skvortsov, V. Mashanov, A. Nikiforov, D. Kolyada, D. Firsov, O. Komkov, S. Samadov, A. Sidorin, O. Orlov. J. Vac. Sci. Technol. B 42, 8, 030601 (2024)
- N. von den Driesch, D. Stange, D. Rainko, I. Povstugar, P. Zaumseil, G. Capellini, T. Schroder, T. Denneulin, Z. Ikonic, J.-M. Hartmann, H. Sigg, S. Mantl, D. Grutzmacher, D. Buca. Adv. Sci. 5, 6, 1700955 (2018)
- R. Soref. Nature Photonics 4, 495 (2010)
- G. Sun, R.A. Soref, H.H. Cheng. Opt. Express 18, 19, 19957 (2010)
- V.A. Timofeev, V.I. Mashanov, A.I. Nikiforov, I.V. Skvortsov, A.E. Gayduk, A.A. Bloshkin, I.D. Loshkarev, V.V. Kirienko, D.V. Kolyada, D.D. Firsov, O.S. Komkov. Appl. Surf. Sci. 593, 153421 (2022)
- R. Bar, A.K. Katiyar, R. Aluguri, S.K. Ray. Nanotechnology 28, 29, 2095201 (2017)
- V. Schlykow P. Zaumseil, M.A. Schubert, O. Skibitzki, Y. Yamamoto, W.M. Klesse, Y. Hou, M. Virgilio, M. De Seta, L. Di Gaspare, T. Schroeder, G. Capellini. Nanotechnology 29, 41, 415702 (2018)
- F. Oliveira, I.A. Fischer, A. Benedetti, M.F. Cerqueira, M.I. Vasilevskiy, S. Stefanov, S. Chiussi, J. Schulze. J. Appl. Phys. 117, 12, 125706 (2015)
- V. Timofeev, I. Skvortsov, V. Mashanov, A. Nikiforov, I. Loshkarev, A. Bloshkin, V. Kirienko, D. Kolyada, D. Firsov, O. Komkov. IEEE Journal of Selected Topics in Quantum Electronics 31, 1, 8200108 (2025)
- D.D. Firsov, O.S. Komkov, V.A. Solov'ev, P.S. Kop'ev, S.V. Ivanov. J. Phys. D: Appl. Phys. 49, 28, 285108 (2016)
- V.A. Timofeev, I.V. Skvortsov, V.I. Mashanov, A.E. Gayduk, A.A. Bloshkin, V.V. Kirienko, D.E. Utkin, A.I. Nikiforov, D.V. Kolyada, D.D. Firsov, O.S. Komkov. Appl. Surf. Sci. 659, 159852 (2024).
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