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Control of magnetic characteristics of spin LEDs with a magnetic system "Mn delta layer --- InGaAs/GaAs quantum well" due to delta doping with an acceptor impurity
Russian version
Ved M.V.1, Dorokhin M.V.1, Kalentyeva I.L.1, Demina P.B.1, Zdoroveishchev A.V.1, Malysheva E.I.1
1Lobachevsky State University, Nizhny Novgorod, Russia
Email: mikhail28ved@gmail.com, dorokhin@nifti.unn.ru, istery@rambler.ru, demina@phys.unn.ru, zdorovei@gmail.com, Malysheva@phys.unn.ru
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Magnetic and luminescent properties of spin light-emitting diodes based on heterostructures with an InGaAs/GaAs quantum well and Mn and C delta-layers are studied. The dependences of the circular polarization degree of electroluminescence on the location of the C delta-layer relative to the quantum well and the Mn delta-layer are obtained. It is found that when the carbon delta-layer is localized in the quantum well region, the maximum value of the circular polarization degree is observed, while when the carbon delta-layer is localized between the quantum well and the Mn delta-layer, the degree of polarization is minimal. The obtained data are explained in terms of known models of the interaction of charge carriers in a quantum well with a closely located Mn delta-layer. Keywords: spin LEDs, A3B5 heteronanostructures, spin polarization, Mn delta layer, circularly polarized electroluminescence.
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