Metal-insulator phase transition in thin films of vanadium dioxide with aluminum impurity
Andreev V. N.1, Klimov V. A.1, Kompan M. E.1
1Ioffe Institute, St. Petersburg, Russia
Email: vn.andreev.solid@mail.ioffe.ru
The paper established that addition of aluminum impurity into vanadium dioxide with oxygen deficiency will not result in formation of insulator phase M2. Doping in this case is accompanied with reduction of temperature of R-phase transition to M1 phase and reduction in the electroconductivity jump that accompanies this phase transition. To explain the temperature dependence of insulator M1-phase electroconductivity, the hopping conductivity model was applied, taking into account the impact of thermal oscillations of atoms at the resonance integral. Keywords: phase transition, electroconductivity, doping, polaron.
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