Electrically inactive magnesium in silicon
Shuman V.B.1, Lodygin А.N.1, Yakovleva A. A.1, Portsel L. M.1
1Ioffe Institute, St. Petersburg, Russia
Email: leonid.portsel@mail.ioffe.ru
The dynamics of MgO complex formation during magnesium diffusion in Czochralskii-grown silicon with oxygen content of ~3·1017 cm-3 has been studied. MgO complexes were found to form only at temperatures above 1100 oC. At lower temperatures, magnesium atoms are in a bound state, presumably in the form of particles, or Mg2Si phase. The formation of complexes occurs after the dissociation of Mg2Si into Mg and Si at higher temperatures. Thus, the experimental results confirm the assumption that the electrically inactive component of the magnesium content in the crystal is the Mg2Si compound. Keywords: silicon doping, diffusion, impurity centers.
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