Investigation of the doping level of semiconductor nanowires via Raman spectroscopy
Sharov V.A.1,2, Alekseev P.A.1, Fedorov V.V.2, Mukhin I.S.2
1Ioffe Institute, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
Email: vl_sharov@mail.ru
The development of characterization techniques for the doping level measurements of epitaxial semiconductor nanowires is an important task on the way to their industrial implementation. In this paper, a method for the doping level measurement using Raman spectroscopy is proposed. The Raman spectra of single vertical gallium phosphide nanowires from a series of samples with different doping levels and types are analyzed. The relationship between the intensity and width of the longitudinal optical phonon mode with the nanowire doping level caused by the phonon-plasmon interaction, is shown. Keywords: GaP, nanowires, doping, Raman scattering, plasmon-phonon interaction, molecular beam epitaxy.
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