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Numerical model for studying 3D-island films by Auger electron spectroscopy. The Sm-Si(111)
Remele V. E.
1, Kuzmin M. V.
1
1Ioffe Institute, St. Petersburg, Russia
Email: m.kuzmin@mail.ioffe.ru
A model for quantifying the peak intensity in Auger electron spectroscopy for thin-film structures formed by the Volmer-Weber, Stranski-Krastanov or similar mechanisms has been proposed. This model can be used to process experimental results and provides information on the density and shape of three-dimensional islands. It is tested for the reactive Sm-Si(111) system. It is found that in this system, a change in the structure of the wetting layer, i. e., the transition from the sqrt(3)sqrt to (5x1) reconstruction, is accompanied by an increase in the aspect ratio of samarium disilicide crystallites by more than seven times. A physical explanation for this transformation is proposed. Keywords: thin films, Auger electron spectroscopy, growth mechanism, three-dimensional islands, wetting layer, samarium disilicide.
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