The results of the crystal structure investigation of the interface layer and surface formed during the Mn₅Ge₃ thin film growth on silicon are presented in this paper. The dynamics of phase composition changes in the film at the initial stages of Mn₅Ge₃ growth on Si(111) 7x7 at 390 ^oC was studied by the reflected high-energy electron diffraction method. The diffraction data were analyzed by combining experimental patterns and calculated electron diffraction patterns for the expected phases, taking into account the data from the equilibrium phase diagrams. It was found that during the deposition of the first 0.5 nm, the formation of MnSi silicide predominates, then Mn₅Ge₃ begins to form together with MnSi at a film thickness of 2.5 nm. The single-phase Mn₅Ge₃ film begins to grow only at a thickness of more than 10 nm. Using atomic force microscopy, it was shown that when maintaining the stoichiometric ratio of Mn and Ge flows, during further growth on a silicon substrate without a buffer layer, a layer-by-layer plus island growth mode of the Stranski-Krastanov is realized. Keywords: manganese germanide, manganese silicide, thin films, electron diffraction, ferromagnets, molecular beam epitaxy, spintronics.

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