Energy transfer in heterostructure GaAs/AlGaAs with quantum wells of different thicknesses separated by thick barriers
Filosofov N. G.1, Agekyn V. F.1, Verbin S. Yu.1, Reznitsky A. N.2, Serov A. Yu.1, Shtrom I. V.1,3,4, Ilkiv I. V.3,4, Reznik R. R.1, Cirlin G. E. 1,3,4
1St. Petersburg State University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
4Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
Email: n.filosofov@spbu.ru
Temperature dependence of luminescence of heterostructure GaAs/Al0.4Ga0.6As was investigated to study energy transfer between the quantum wells (QWs). The sample contains three 9.6, 4.8 and 2.4 nm thick QWs separated by 14 nm thick barriers. The experimental data was analyzed based on the model that has been previously used to II-VI heterostructures. Keywords: quantum wells III = V, luminescence, energy transfer.
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