Ruzhevich M. S.1, Mynbaev K. D.
2, Bazhenov N. L.2, Dorogov M. V.1, Smirnov A. M.1, Belkov V. V.2, Tomkovich M. V.2, Varavin V. S.3, Remesnik V. G.3, Uzhakov I. N.3, Mikhailov N. N.3
1ITMO University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: max.ruzhevich@niuitmo.ru, mynkad@mail.ioffe.ru, bazhnil.ivom@mail.ioffe.ru
The article presents the results of studying the structural and optical properties of Hg1-xCdxTe films with a high (x=0.5-0.7) CdTe content, grown by molecular beam epitaxy and subjected to thermal annealing at temperatures from 330 to 440 oC. The effect of annealing on the crystal structure and point defects is determined based on optical transmittance, photoluminescence, X-ray diffraction, and energy-dispersive X-ray spectroscopy studies. It is shown that the defect structure of the material undergoes significant changes after annealing, while its crystalline perfection changes insignificantly. Keywords: HgCdTe, annealing, photoluminescence, defects, structural properties.
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