Influence of the degree of atomic ordering on the ferroelectric properties of GaInP2 solid solutions
Vlasov A.1, Axenov V.1, Ankudinov A.1, Bert N.1, Kalyuzhnyy N.1, Lebedev D.1, Salii R.1, Pirogov E., Mintairov A.1
1Ioffe Institute, St. Petersburg, Russia
Email: vlasov@scell.ioffe.ru
GaInP2 layers grown by metal-organic epitaxy on GaAs (100) substrates at a temperature of 720oC, V/III group flux ratio of 15-150 and substrate misorientation of 0 and 6o have been investigated. Structural (X-ray diffraction, transmission electron microscopy and Raman-scattering spectroscopy) and optical (photoluminescence) properties together with surface potential measurements (Kelvin probe microscopy) of 500 nm thick layers have been performed. The presence of atomic ordering with CuPt B structure corresponding to the monolayer superlattice GaP1/InP1 along the [111] B direction and the variation of the degree of ordering eta=0.05-0.56 depending on the growth conditions were shown. Surface potential measurements revealed a decrease in the built-in electric field, suppression of lattice relaxation due to the different symmetry of the substrate and layer (martensitic transition), and fixation (pinning) of the Fermi level as eta decreases, which shows the possibility to control the ferroelectric properties of atomically ordered GaInP2 layers. Keywords: GaInP2, Kelvin probe microscopy, atomic ordering, piezoelectric effects.
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