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Flexoelectric effect in GeTe
Russian version
Kuznetsov V. G. 1,2, Yakubov A. O. 3, Terekhov D. Yu.3, Lazarenko P. I. 3, Trepakov V. A. 1, Kolobov A. V.4
1Ioffe Institute, St. Petersburg, Russia
2Herzen State Pedagogical University of Russia, St. Petersburg, Russia
3National Research University of Electronic Technology (MIET), Zelenograd, Russia
4Herzen State Pedagogical University of Russia, Institute of Physics, St. Petersburg, Russia
Email: vladimir.kuznetsov@mail.ioffe.ru, alexsey007@mail.ru, aka.jum@gmail.com, trevl@mail.ioffe.ru, akolobov@herzen.spb.ru
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Germanium telluride (GeTe), being chemically and structurally very simple, possesses a plethora of functional properties. It is a semiconductor that becomes a superconductor under pressure, a high-temperature ferroelectric, a model phase-change material, a good thermoelectric and the material with a giant Rashba effect. In this work, by means of first-principle simulations and electrical measurements we demonstrate that thin slabs of GeTe may be flexoelectrics. In combination with the Rashba effect these findings suggest a new - mechanical - way to control the materials spin properties paving way to creation of novel spintronic devices. Keywords: Germaniun telluride, ferroelectic, first-principle simulations, flexoelectric effect, spintronics.
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