Physics of the Solid State
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Thermoelectric properties of p-(Bi,Sb)2Te3 solid solution taking into account of the energy dependence of the relaxation time
Lukyanova L. N. 1, Usov O. A. 1, Danilov V. A. 1
1Ioffe Institute, St. Petersburg, Russia
Email: lidia.lukyanova@mail.ioffe.ru, oleg.usov@mail.ioffe.ru, v.danilov@mail.ioffe.ru

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The temperature dependences of thermoelectric properties in polycrystalline layered films of p-Bi0.5Sb1.5Te3 topological insulators formed on polyimide and mica substrates by discrete deposition and thermal evaporation techniques have been studied. It is shown that the increase in the figure of merit Z of p-Bi0.5Sb1.5Te3 depends on the value of the effective scattering parameter reff, which determines the energy dependence of the relaxation time tau(E). An increase in the figure of merit, up to Zmax=4.5· 10-3 K-1 at T=240 K, is observed at optimal values of the reff parameter in the annealed films formed by discrete deposition on polyimide and mica substrates. Such enhancement of Z in the film on the polyimide substrate is determined by a low thermal conductivity, and on the mica one by an increase in the power factor caused by raise of the Seebeck coefficient. Deviation from the optimal values of reff in the unannealed films on polyimide during discrete evaporation results in a decrease in the figure of merit. Keywords: chalcogenides of bismuth and antimony, the figure of merit, topological insulator, scattering parameter.
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