Temperature stability of a new type ferromagnetism in a gapless diluted magnetic semiconductor Hg1-xFexSe (x=0.009 at.%) with extremely low concentration of iron impurities
Govorkova T.E.
1, Vaulin A.A. 1, Popov M.R. 1, Okulov V.I. 1
1M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, Russia
Email: govorkova@imp.uran.ru
A new type of ferromagnetism was been studied in a gapless diluted magnetic semiconductor (DMS) Hg1-xFexSe with an extremely low concentration of impurity iron (x=0.009 at.%), which was previously predicted theoretically. Magnetization measurements at two temperatures (T1=5 K, T2=300 K) in magnetic fields H=±50 kOe were carried out. For impurity contributions at both temperatures, magnetization curves MH(H) were obtained with parameters that are characteristic of ferromagnets. It was determined that the sample under study with a minimum iron concentration NFe=1.8·1018 cm-3 (x=0.009 at.%), in addition to a series of Hg1-xFexSe single crystals previously studied by us (x=0.012-0.13 at.%), is included in the hybrid ization interval, in which magnetism of a special type is observed (without inter-impurity interaction). It has been established that the new mechanism of magnetic ordering in a wide temperature range (5-300 K) is due to hybridization effects and exchange interaction of donor conduction electrons, more effective than indirect exchange interaction in conventional DMS (type GaAs:Mn). Keywords: spontaneous spin magnetism, diluted magnetic semiconductors (DMS), low-concentration d-impurities, spin polarization of conduction electrons, spintronics.
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