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Parameters of stimulated emission in Al0.65Ga0.35N : Si/AlN/Al2O3-structure with planar geometry
Bokhan P. A.
1, Zhuravlev K. S.1, Zakrevsky Dm. E.1,2, Malin T. V.
1, Fateev N. V.
1,3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Novosibirsk State University, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Novosibirsk State University, Novosibirsk, Russia
Email: bokhan@isp.nsc.ru, zuravlev@isp.nsc.ru, zakrdm@isp.nsc.ru, mal-tv@isp.nsc.ru, fateev@isp.nsc.ru
The parameters of stimulated emission from the Al0.65Ga0.35N/AlN/Al2O3-heterostructure were experimentally studied in the wide spectral range of 370-670 nm at room temperature, caused by the action of transverse pulsed optical pumping with the wavelength radiation of 266 nm, pulse duration of 8 ns, and the repetition rate of the 10 Hz. The silicon doped nSi~1.5·1020 cm-3 film of the concentration Al0.65Ga0.35N, with a thickness of 1.1 μm is the asymmetric planar with the optical gain of ~10 cm-1. The quantum efficiency of stimulated emission is eta~18% at the optical pumping power of the P_p=100 kW/cm2 and the output of stimulated emission through the Al2O3 substrate. The emission spectrum consists of a set of equidistant peaks, each of which consists of the sum of two plane TE and TM waves. These waves propagate in a zigzag manner due to internal reflection at the boundaries of the structure. A narrow angular divergence of 5.3o of stimulated emission in the direction perpendicular to the plane of the structure is obtained, and the parallel direction divergence is 20o. Keywords: heavily doped AlxGa1-xN structures, planar waveguide, optical gain, donor-acceptor recombination.
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