Novikov Yu.N.1, Gritsenko V.A.1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
Email: nov@isp.nsc.ru
The energy spectrum of localized hole states in amorphous silicon nitride (Si3N4) was determined using the method of thermally stimulated depolarization. The energy of the hole trap is 1.15 eV. The width of the spectrum of hole localized states does not exceed 10 meV, which is less than kT=26 meV at room temperature. This result indicates that the broadening of the level of localized states, due to the absence of long-range order in amorphous Si3N4, i.e. due to fluctuations of the Si-N interatomic distance, N-Si-N tetrahedral angle and Si-N-Si dihedral angle, is small. Keywords: thermally stimulated depolarization, silicon nitride, traps, multiphonon ionization mechanism.
- N. Mott, E. Davis. Eletronnye protsessy v nekristallicheskikh veshchestvakh / Pod red. B.T. Kolomiets Mir, M. (1982). (in Russian)
- Amorfnye poluprovodniki / Pod red. M. Brodskij Mir, M. (1982), 421 s. (in Russian)
- B.I. Shklovsky, A.L. Efros. Elektronnye svojstva legirovannykh poluprovodnikov, Nauka, M. (1979). 416 s. (in Russian)
- V.A. Gritsenko, UFN 182, 5, 531 (2012). (in Russian)
- V.A. Gritsenko, E.E. Meerson, Yu.N. Morokov. Phys. Rev. B 57, 4, R 2081 (1997)
- A. Goda. Recent Progress on 3D NAND Flash Technologies, Electronics 10, 24, 3156 (2021)
- E.S. Gornev, I.V. Matyushkin, I.F. Kalimova. Elektronnaya tekhnika, Seriya 3, Mikroelektronika, 2, 182, 33 (2021). (in Russian)
- S.V. Tikhov, O.N. Gorshkov, I.N. Antonov, D.I. Tetelbaum, A.N. Mikhailov, A.I. Belov, A.I. Morozov, P. Karakolis, P. Dimitrakis. FTP 52 (12), 1436 (2018). (in Russian)
- F.F. Komarov, I.A. Romanov, L.A. Vlasukova, I.N. Parhomenko, A.A. Tsivako, N.S. Kovalchuk. ZhTF 91, 1, 139 (2021). (in Russian)
- A.A. Gismatulin, O.M. Orlov, V.A. Gritsenko, V.N. Kruchinin, D.S. Mizginov, G.Ya. Krasnikov. Appl. Phys. Lett. 116, 203502 (2020)
- G. Pacchioni, D. Erbetta. Phys. Rev. B 60, 18, 12617 (1999)
- M. Petersen, Y. Roizin. Appl. Phys. Lett. 89, 5, 053511 (2006)
- M.-E. Grillo, S.D. Elliott. Phys. Rev. B 83, 8, 085208 (2011)
- K. Sonoda, E. Tsukuda, M. Tanizawa, Y. Yamaguchi. J. Appl. Phys. 117, 10, 104501 (2015)
- V.A. Gritsenko, T.V. Perevalov, O.M. Orlov, G.Ya. Krasnikov. Appl. Phys. Lett. 109, 6, 06294 (2016)
- Yu.N. Novikov, V.A. Gritsenko. J. Non-Crystal. Solids 582, 121442 (2022)
- J. Stohr, L. Johansson, I. Lindau, P. Pianetta. Phys. Rev. B 20, 2, 664 (1979)
- V.A. Gritsenko, UFN 178, 7, 727 (2008). (in Russian)
- S.-D. Tzeng, S. Gwo. J. Appl. Phys. 100, 2, 023711 (2006)
- E. Lusky, Y. Shacham-Diamand, A. Shappir, I. Bloom, B. Eitan. Appl. Phys. Lett. 85, 4, 669 (2004)
- A. Padovani, L. Larcher, D. Heh, G. Bersuker, V.D. Marca, P. Pavan. Appl. Phys. Lett. 96, 22, 223505 (2010)
- J.G. Simmons, G.W. Taylor. Phys. Rev. B 5, 4, 1619 (1972)
- J. G. Simmons, G. W. Taylor, M. C. Tam. Phys. Rev. B 7, 8, 3714 (1973)
- S.L. Miller, D.M. Fleetwood, P.J. McWhorter. Phys. Rev. Lett. 69, 5, 820 (1992)
- R.C. Hughes. Phys. Rev. Lett. 30, 26, 1333 (1973)
- S.S. Makram-Ebeid, M. Lannoo. Phys. Rev. B 25, 10, 6406 (1982)
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