Turdaliev T. K.1, Zokhidov Kh. Kh.1, Abdurakhmanov F. I.1, Rakhimov A. A.1, Ashurov Kh. B.1
1Institute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
Email: turdaliev@iplt.uz
The process of obtaining a thin TiO2 film on a silicon substrate using atomic layer deposition is described. The study investigates the phase transition in these films from the anatase to rutile polymorphs under various heat treatment conditions. Raman spectroscopy, X-ray diffraction, and atomic force microscopy are used to analyze the structural changes and surface morphology of the films before and after thermal treatment. Analytical data confirm that the anatase TiO2 polymorph grows during thermal atomic layer deposition using titanium tetra-isopropoxide and water as precursors, resulting in a polycrystalline film. During thermal treatment, a complete transition from anatase to rutile for a 1.5 μm thick film on a silicon substrate occurs after 2 to 3 hours at 1000oC. Keywords: titanium dioxide film, anatase, rutile, atomic layer deposition, phase transition, Raman spectroscopy, atomic force microscopy.
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Дата начала обработки статистических данных - 27 января 2016 г.
