Investigation of the sensitivity of a TMR sensor based on magnetic tunnel junctions with uniaxial crystalline anisotropy in the free layer
Lobkova M. D.1, Skirdkov P. N.1,2, Zvezdin K. A.1
1New Spintronic Technologies, Russian Quantum Center, Skolkovo Innovation Center, Moscow Region, Moscow, Russia
2Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia
Email: m.shkanakina@nst.tech
An approach to designing a tunnel magnetoresistive sensor based on magnetic tunnel junctions with uniaxial crystalline anisotropy in the free layer is presented. A detailed study of the influence of the shape, tunnel magnetoresistance and anisotropy field on the sensitivity and transfer characteristics of the TMR-sensor is performed. Keywords: Magnetic tunnel junction, MTJ, TMR-sensor, sensitivity of TMR-sensor, spintronics, spintronic sensor.
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