Grigoryev L. V.
1,2, Semenov A. A
2, Mikhailov A. V.
31St. Petersburg State University, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
3Vavilov State Optical Institute, St. Petersburg, Russia
Email: lvgrigoryev@mail.ru
A new method of photon-stimulated surface treatment of a semiconductor is described the method of two-spectral laser-stimulated oxidation of a layer of porous silicon. The results of studying the optical properties of a layer of laser-oxidized nanoporous silicon in a spectral band are presented. The initial layer of nanoporous silicon was obtained by electrolytic etching of the surface of the single-crystal silicon KDB-10 (100) according to generally accepted method. The density of anode etching was 25.0 mA/cm2. A laser-stimulated oxidation of a nanoporous silicon layer was carried out using two laser radiation lengths of unequal intensity at a fundamental wavelength of 1.064 μm using a DPSS YAG: Nd laser operating in a pulsed mode. The laser wavelengths for the photon-stimulated assay mode was 980 nm, 520 nm, and 405 nm. Keywords: Photon-stimulated surface treatment, laser-stimulated oxidation, laser-oxidized nanoporous silicon, X-ray difraction, transmission spectra, structure integral optics.
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