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Two-wave method of laser-stimulated oxidation of the porous silicon layer
Grigoryev L. V.
1,2, Semenov A. A
2, Mikhailov A. V.
3
1St. Petersburg State University, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
3Vavilov State Optical Institute, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
3Vavilov State Optical Institute, St. Petersburg, Russia
Email: lvgrigoryev@mail.ru
A new method of photon-stimulated surface treatment of a semiconductor is described the method of two-spectral laser-stimulated oxidation of a layer of porous silicon. The results of studying the optical properties of a layer of laser-oxidized nanoporous silicon in a spectral band are presented. The initial layer of nanoporous silicon was obtained by electrolytic etching of the surface of the single-crystal silicon KDB-10 (100) according to generally accepted method. The density of anode etching was 25.0 mA/cm2. A laser-stimulated oxidation of a nanoporous silicon layer was carried out using two laser radiation lengths of unequal intensity at a fundamental wavelength of 1.064 μm using a DPSS YAG: Nd laser operating in a pulsed mode. The laser wavelengths for the photon-stimulated assay mode was 980 nm, 520 nm, and 405 nm. Keywords: Photon-stimulated surface treatment, laser-stimulated oxidation, laser-oxidized nanoporous silicon, X-ray difraction, transmission spectra, structure integral optics.
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