Impurity composition and cathodoluminescence of HPHT-diamond type IIb with boron concentration up to 15 ppm
Kravets V. A.1, Klepikov I. V.2,3, Vasilyev E. A.4
1Ioffe Institute, St. Petersburg, Russia
2LLC NPK “Almaz”, Saint-Petersburg, Russia
3Laboratory "Diamond microwave electronics" RTU MIREA, Moscow, Russia
4St. Petersburg Mining University, St. Petersburg, Russia
Email: vladislav2033@yandex.ru
A single-crystal multisector plate of HPHT-type IIb diamond by local cathodoluminescence (SL) at 77 K and IR spectroscopy has been studied. The SL features of growth sectors (100), (110), (113), (111) of HPHT-grown diamond were investigated. In the luminescence of the band with a maximum of 2.3 eV, two growth sector species-dependent components with lifetimes in the ranges of 6-13 and 75-115 μs are identified, respectively. The lifetime of the band with a maximum of 3.0 eV is less than 100 ns. An assumption is made that each growth facet represents a separate luminescent material with its characteristic cathodoluminescent properties. A diagram of boron impurity capture by different growth facets under low-nitrogen growth conditions is constructed. Keywords: IK spectroscopy, growth sector, luminescence properties, lifetimes.
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