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Characteristic of the Ba0.8Sr0.2TiO3 film interface with the Si (100) surface
Russian version
Kozakov A. T. 1, Nikolskiy A. V. 1, Mukhortov V. M.2, Golovko Yu. I.2, Skriabin A. A.1, Stryukov D. V.2
1Scientific Research Institute of Physics, Southern Federal University, Rostov-on-Don, Russia
2Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
Email: kozakov_a@mail.ru, anikolskiy@sfedu.ru., mukhortov1944@mail.ru, urgol@rambler.ru., skryabin@sfedu.ru., strdl@mail.ru.
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Using X-ray photoelectron spectroscopy, the chemical bonds at the interface between the single-crystal surface of a silicon substrate (p- and n-type) and the Ba0.8Sr0.2TiO3 (BST) film of Si(100)/Ba0.8Sr0.2TiO3 heterostructures, which were created by sputtering ceramic Ba0.8Sr0.2TiO3 targets in a high-frequency γ-discharge at elevated oxygen pressure (~1 Torr) using the "Plasma 50 SE" unit. Chemical bonds at the interface between the single-crystal surface of a silicon substrate (p- and n-type) and the Ba0.8Sr0.2TiO3 (BST) film of Si(100)/Ba0.8Sr0.2O3 heterostructures have been studied using X-ray photoelectron spectroscopy. Heterostructures were created by sputtering a Ba0.8Sr0.2TiO3 ceramic target in a high-frequency γ-discharge at a sufficiently high oxygen pressure (~1 Torr) on the "Plasma 50 SE" installation of two orientations of crystallites in the films: [001] and [011]. The bulk fraction of BST crystallites with [001] orientation is 96% for the n-type Si substrate and 97% for the p-type Si substrate. The bulk fraction of BST crystallites with [011] orientation is 4% for the n-type Si substrate and 3% for the p-type Si substrate. X-ray electron studies have shown that 46% of the silicon atoms at the interface are bound to oxygen, belonging to the BST structure; 18% of silicon atoms belong to the SiO2 layer. In addition, at the interface there are titanium and strontium atoms chemically bonded to the silicon atoms and oxygen atoms of the BST structure. The Si/BST interface is sharp and at a thickness of ~6 Angstrem is already fully formed. Keywords: X-ray photoelectron spectroscopy, chemical bonds, interface, surface, silicon substrate, crystallites.
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