Physics of the Solid State
Volumes and Issues
Home » Physics of the Solid State » Year 2023, issue 11 » Article p. 1818
<<<>>>
Exciton states in narrow quantum wells InxGa1-xAs/GaAs
Russian version
Grigorieva N. R.1, Mikhailov A. V. 2, Khramtsov E. S. 2, Ignatiev I. V.2
1St. Petersburg State University, St. Petersburg, Russia
2SOLAB Spin-optic laboratory, Saint-Petersburg state university, St. Petersburg, Russia
Email: n.r.grigorieva@spbu.ru
PDF
The reflection spectra of a high-quality heterostructure with a narrow quantum well InxGa1-xAs/GaAs (x=0.022) are studied. Microscopic modeling of the exciton spectrum is performed using a numerical solution of the three-dimensional Schrodinger equation. It is shown that two exciton resonances below the free exciton energy in GaAs are formed by a heavy hole exciton localized in a quantum well. The potential profile of a quantum well is determined within the framework of a theoretical model with parameters calculated ab initio. For the studied structure, the ratio of the discontinuities of the valence band (Ev) and the conduction band (Ec) is obtained: E_c:E_v=64:36. Keywords: excitons, polaritons, heterostructures, quantum well, microscopic calculation.
  1. J.J. Coleman, P.K. York, K.J. Beernink. Laser Diode Technology and Applications II, 1219, 32 (1990)
  2. P.V. Bulaev, V.A. Kapitonov, A.V. Lutetsky, A.A. Marmalyuk, D.B. Nikitin, D.N. Nikolayev, A.A. Padalitsa, N.A. Pikhtin, A.D. Bondarev, I.D. Zalevsky, I.S. Tarasov. FTP, 36, 1144 (2002). (in Russian)
  3. Kwang Woong Kim, Jin Dong Song, Won Jun Choi, Jung I Lee. J. Korean Phys. Soc. 49, 1169 (2006)
  4. A. Stohr, O. Humbach, S. Zumkley, G. Wingen, G. David, D. Jager, B. Bollig, E.C. Larkins J.D. Ralston. Opt. Quantum Electron. 25, S865 (1993)
  5. S.W. Lee, K.U. Chu, S.W. Kim, S. Park, O'D. Kwon, K.W. Goossen, S.S. Pei. Appl. Phys. Lett. 64, 3065 (1994)
  6. L. Tinkler, P.M. Walker, E. Clarke, D.N. Krizhanovskii, F. Bastiman, M. Durska, M.S. Skolnick. Appl. Phys. Lett. 106, 021109 (2015)
  7. D. Ballarini1, M. De Giorgi, E. Cancellieri, R. Houdre, E. Giacobino, R. Cingolani, A. Bramati, G. Gigli, D. Sanvitto1. Nature Commun 4, 1778 (2013)
  8. T. Kuriakose, P.M. Walker, T. Dowling, O. Kyriienko, I.A. Shelykh, P. St-Jean. Nature Photon. 16, 8, 566 (2022)
  9. G.L. Bir, G.E. Pikus. Simmetriya i deformacionnye effekty v poluprovodnikakh, Nauka, M., (1972) 584 s. (in Russian)
  10. Chris G. Van de Walle. Phys Rev B 39, 3, 1871 (1989)
  11. D.J. Arent, K. Deneffe, C. Van Hoof, J. De Boeck, G. Borghs. J. Appl. Phys. 66, 1739 (1989)
  12. I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan. J. Appl. Phys. 89, 5815 (2001)
  13. K.W. Boer, U.W. Pohl. Semiconductor Physics. Springer Cham (2018). 1299 p
  14. A.V. Kavokin, S.I. Kokhanovsky, A.I. Nesvizhsky, M.E. Sasin, R.P. Seisyan, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, S.V. Gupalov. FTP, 31, 1109 (1997). (in Russian)
  15. S.V. Poltavtsev, Yu.P. Efimov, Yu.K. Dolgikh, S.A. Eliseev, V.V. Petrov, V.V. Ovsyankin. Solid State Commun. 199, 4751 (2014)
  16. E.S. Khramtsov, P.A. Belov, P.S. Grigoryev, I.V. Ignatiev, S.Yu. Verbin, Yu.P. Efimov, S.A. Eliseev, V.A. Lovtcius, V.V. Petrov, S.L. Yakovlev. J. Appl. Phys. 119, 184301 (2016)
  17. L.G. Grechikov, A.V. Subashiev. FTP 27, 446 (1993). (in Russian)
  18. R.P. Seisyan, A.V. Kavokin, Kh. Moumanis, M.E. Sasin. FTT 59, 1133 (2017). (in Russian)
  19. Kyu-Seok Lee, El-Hang Lee. ETRI J. 17, 13 (1996)
  20. Kyu-Seok Leea, Chae-Deok Lee, Yongmin Kim, Sam Kyu Noh. Solid State Commun. 128, 177 (2003)
  21. R. Samti, F. Raouafi, M. Chaouach, M. Maaref, A. Sakri, J. Even, J.-M. Gerard, J.-M. Jancu. Appl. Phys. Lett. 101, 012105 (2012)
  22. E.L. Ivchenko. Optical Spectroscopy of Semiconductor Nanostructures. Alpha Science, Harrow (2005). 427 p
  23. M.M Voronov, E.L. Ivchenko, V.A. Kosobukin, A.N. Poddubny. FTT 49, 9, 1709 (2007). (in Russian)
  24. E.S. Khramtsov, P.S. Grigoryev, D.K. Loginov, I.V. Ignatiev, Yu.P. Efimov, S.A. Eliseev, P.Yu. Shapochkin, E.L. Ivchenko, M. Bayer. Phys. Rev. B 99, 035431 (2019)
  25. M.N. Bataev, M.A. Chukeev, M.M. Sharipova, P.A. Belov, P.S. Grigoryev, E.S. Khramtsov, I.V. Ignatiev, S.A. Eliseev, V.A. Lovtcius, Yu.P. Efimov. Phys. Rev. B 106, 085407 (2022)
  26. K. Muraki, S. Fukatsu, Y. Shiraki. Appl. Phys. Lett. 61, 557 (1992)
  27. V.A. Kiselev, B.V. Novikov, A.E. Cherednichenko. Eksitonnaya spektroskopiya pripoverkhnostnoy oblasti poluprovodnikov, Izd-vo S.-Peterburgskogo un-ta, SPb., (2003) 244 s. (in Russian)
  28. R. Del Solo, D'Andrea. Optical Switching in Low-dimensional Systems. Plenum Publishing Corporation (1989). 289 p
  29. D.K. Loginov, E.V. Ubyivovk, Yu.P. Efimov, V.V. Petrov, S.A. Eliseev, Yu.K. Dolgikh, I.V. Ignatyev, V.P. Kochereshko, A.V. Selkin. FTT 48, 11, 1979 (2006). (in Russian)
  30. A.B. Pevtsov, S.A. Permogorov, A.V. Selkin, N.N. Syrbu, A.G. Umanets. FTP 16, 8, 1399 (1982). (in Russian)
  31. N.N. Akhmetdiev. ZhETF 79, 1534 (1980). (in Russian)
  32. Xing-Fei He. Phys Rev B 43, 3, 2063 (1991).

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru