The results of a study of the effect of annealing on the structural transformation of thin films of α- and kappa-Ga₂O₃ obtained by chloride vapor-phase epitaxy on c-plane of a sapphire substrate are presented. It has been shown that upon annealing of an α-Ga₂O₃ film during 60 min at a temperature in the region of the polymorphic transition of 550-575^oC, its homogeneity begins to be disrupted, and a partial polymorphic transition is observed with the formation of small β-Ga₂O₃ crystallites. As a result of high-temperature annealing of the kappa-Ga₂O₃ film in air for 30 min at a temperature T=850^oC, the kappa->β transition and recrystallization of the original film into a homogeneous β-Ga₂O₃ film were observed. It was found that the resulting film predominantly consists of mutually oriented domains. Using transmission electron microscopy, the orientation relationships between the film and the sapphire substrate were determined. The structure of boundaries between domains has been studied. Keywords: gallium oxide, polymorphism, polymorphic transitions.

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