Physics of the Solid State
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Radiative recombination in the InAs/InSb type II broken-gap heterojucntion with quantum dots at the interface
Parkhomenko Ya. A. 1, Ivanov E. V. 1, Moiseev K. D. 1
1Ioffe Institute, St. Petersburg, Russia
Email: yana_parkhom@rambler.ru, Ed@mail.ioffe.ru, mkd@iropt2.ioffe.ru

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The electroluminescent properties of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed at the interface of the p-n junction in InAs were studied. The features of the electroluminescence spectra depending on the surface density of nanoobjects at a broken-gap type II heterointerface were investigated both at forward and reverse bias. When applying a reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojunction were observed at room temperature. The radiation, which corresponded to recombination transitions involving localized states of InSb quantum dots, was recorded at low temperature. Keywords: quantum dots, electroluminescence, InAs, InSb, type II heterojunction.
  1. I. Kulesh, C.T. Ke, C. Thomas, S. Karwal, C.M. Moehle, S. Metti, R. Kallaher, G.C. Gardner, M.J. Manfra, S. Goswami. Phys. Rev. Appl. 13, 041003 (2020). https://doi.org/10.48550/arXiv.1910.07309
  2. T. Hensgens, T. Fujita, L. Janssen, X. Li, C.J. Van Diepen, C. Reichl, W. Wegscheider, S. Das Sarma, L.M.K. Vandersypen. Nature 548, 70 (2017). https://doi.org/10.1038/nature23022
  3. A.Ye. Zhukov, M.V. Maksimov, A.R. Kovsh. Semiconductors 46, 10, 1225 (2012)
  4. P. Martyniuk. A. Rogalski. Prog. Quant. Electron. 32, 89 (2008)
  5. V.V. Romanov, E.V. Ivanov, K.D. Moiseev, A.A. Pivovarova, Yu.P. Yakovlev. Semiconductors 54, 253 (2020). DOI: 10.1134/S1063782620020189
  6. Zh.I. Alferov. Semiconductors 32, 1, 1 (1998)
  7. A. Karim, O. Gustafsson, L. Hussain, Q. Wang, B. Noharet, M. Hammar, J. Anderson, J. Song. Proc. SPIE 8439, 84391J (2012)
  8. Ya.A. Parkhomenko, E.V. Ivanov, K.D. Moiseev. Semiconductors 47, 1523 (2013). DOI: 10.1134/S1063782613110171
  9. K.D. Moiseev, Ya.A. Parkhomenko, E.V. Gushchina, A.V. Ankundinov, M.P. Mikhailova, N.A. Bert, Yu.P. Yakovlev. Semiconductors 43, 1102 (2009). DOI: 10.1134/S1063782609080259
  10. K.D. Moiseev, Ya.A. Parkhomenko, V.N. Nevedomsky. Thin Solid Films 543, 74 (2013)
  11. M.A. Bunin, Yu.A. Matveev. FTP 19, 11, 2018 (1985). (in Russian)
  12. M.M. Grigoryev, P.A. Alekseev, E.V. Ivanov, K.D. Moiseev. Semiconductors 47, 28 (2013). DOI: 10.1134/S1063782613010120
  13. K. Moiseev, E. Ivanov, V. Romanov, M. Mikhailova, Yu. Yakovlev, E. Hulicius, A. Hospodkova, J. Pangrac, T. vSimevcek. Phys. Proc. 3, 1189 (2010)
  14. E.I. Georgitse, I.T. Postolaki, V.A. Smirnov, P.G. Untila. FTP 23, 4, 745 (1989). (in Russian)
  15. K.D. Moiseev, V.A. Berezovets, K.Yu. Golenitskii, N.S. Averkiev. Low Temp. Phys. 45, 153 (2019). https://doi.org/10.1063/1.5086404
  16. Q. Zhuang, P.J. Carrington, A. Krier. J. Phys. D: Appl. Phys. 41, 232003 (2008). DOI: 10.1088/0022-3727/41/23/232003

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