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X-ray Luminescent Properties of Zinc Oxide Films on the Sapphire M and A-Plane
Russian version
DOI: 10.21883/EOS.2022.11.55106.3845-22
Venevtsev I. D. 1, Muslimov A. E.2, Tarasov A. P. 2,3, Emiraslanova L. L.4, Ismailov A. M.4, Kanevsky V. M.2
1Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
2Shubnikov Institute of Crystallography “Crystallography and Photonics”, Russian Academy of Sciences, Moscow, Russia
3M.F. Vladimirsky Moscow Regional Research and Clinical Institute (MONIKI), Moscow, Russia
4Dagestan State University, Makhachkala, Dagestan Republic, Russia
Email: Venevtsev.Ivan@gmail.com
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The results of comparative studies of the processes of high-temperature synthesis, luminescence and scintillation characteristics of ZnO films on M(100)- and A(110)-orientation sapphire substrates are presented. It is shown that the use of the magnetron deposition method makes it possible to form, against the background of a continuous film, ensembles of individual [001] ZnO microcrystals with pronounced X-ray luminescent properties. The X-ray luminescence kinetics is characterized by two components: a fast component with a decay time in the order of a nanosecond and a slow luminescence component. The study of the films by photoluminescence spectroscopy revealed the features of the near-band-edge luminescence spectra of the samples, in particular, the presence of various excitonic emission channels. Differences in the spectral parameters of the near-band-edge luminescence band in the case of optical and X-ray excitation are found and interpreted. Keywords: Films, microcrystals, zinc oxide, X-ray luminescence, photoluminescence, excitonic emission.
  1. B.H. Lin, H.Y. Chen, S.C. Tseng, J.X. Wu, B.Y. Chen, C.Y. Lee, G.C. Yin, S.H. Chang, M.T. Tang, W.F. Hsieh. Appl. Phys. Lett., 109, 192104 (2016). DOI: 10.1063/1.4967743
  2. B.H. Lin, X.Y. Li, D.J. Lin, B.L. Jian, H.C. Hsu, H.Y. Chen, S.C. Tseng, C.Y. Lee, B.Y. Chen, G.C. Yin, M.Y. Hsu, S.H. Chang, M.T. Tang, W.F. Hsieh. Sci. Rep., 9, 207 (2019). DOI: 10.1038/s41598-018-36764-8
  3. M.R. Wagner, G. Callsen, J.S. Reparaz, J.H. Schulze, R. Kirste, M. Cobet, I.A. Ostapenko, S. Rodt, C. Nenstiel, M. Kaiser, A. Hoffmann, A.V. Rodina, M.R. Phillips, S. Lautenschlager, S. Eisermann, B.K. Meyer. Phys. Rev. B, 84, 035313 (2011). DOI: 10.1103/PhysRevB.84.035313
  4. P.A. Rodnyi, K.A. Chernenko, I.D. Venevtsev. Opt. Spectrosc., 125, 372 (2018). DOI: 10.1134/S0030400X18090205
  5. K. Oka, H. Shibata, S. Kashiwaya. J. Cryst. Growth., 237 (1), 509 (2002). DOI: 10.1016/S0022-0248(01)01953-4
  6. F. Huang, Z. Lin, W. Lin, J. Zhang, K. Ding, Y. Wang, Q. Zheng, Z. Zhan, F. Yan, D. Chen, P. Lv, X. Wang. Chin. Sci. Bull., 59 (12), 1235 (2014). DOI: 10.1007/s11434-014-0154-4
  7. I.D. Venevtsev, A.P. Tarasov, A.E. Muslimov, E.I. Gorokhova, L.A. Zadorozhnaya, P.A. Rodnyi, V.M. Kanevsky. Materials, 14 (8), 2001, (2021). DOI: 10.3390/ma14082001
  8. I.D. Venevtsev, P.A. Rodnyi, A.E. Muslimov, V.M. Kanevskii, V.A. Babaev, A.M. Ismailov. Opt. Spectrosc., 127, 1075 (2019). DOI: 10.1134/S0030400X19120282
  9. A.E. Muslimov, V.M. Kanevsky, I.D. Venevtsev, A.M. Ismailov. Cryst. Rep., 65, 766 (2020). DOI: 10.1134/S1063774520050144
  10. K. Tsunekawa. J. Vac. Soc. Japan., 53, 486 (2010). DOI: 10.3131/jvsj2.53.486
  11. M. Podlogar, J.J. Richardson, D. Vengust, N. Daneu, Z. Samardv zija, S. Bernik, A. Rev cnik. Adv. Funct. Mater., 22 (15), 3136 (2012). DOI: 10.1002/adfm.201200214
  12. M. Madel, G. Neusser, U. Simon, B. Mizaikoff, K. Thonke. J. Cryst. Growth, 419, 128 (2015). DOI: 10.1016/j.jcrysgro.2015.03.020
  13. A.E. Muslimov, A.M. Ismailov, Yu.V. Grigoriev, V.M. Kanevsky. J. Surface Investigation: X-ray, Synchrotron and Neutron Techniques., 15, 1195 (2021). DOI: 10.1134/S1027451021060148
  14. P.A. Rodnyi, S.B. Mikhrin, A.N. Mishin, A.V. Sidorenko. IEEE Trans. Nucl. Sci., 48 (6), 2340 (2001). DOI: 10.1109/23.983264
  15. L. Zhang, J. Wu, T. Han, F. Liu, M. Li, X. Zhu, Q. Zhaoa, T. Yu. Cryst. Eng. Commun., 23 (18), 3364 (2021). DOI: 10.1039/d1ce00040c
  16. E. Chubenko, V. Bondarenko, A. Ghobadi, G. Ulusoy, K. Topalli, A.K. Okyay. MRS Advances, 2 (14), 799 (2017). DOI: 10.1557/adv.2017.150
  17. J. Thornton. Annu. Rev. Mater. Sci., 7, 239 (1977). DOI: 10.1146/annurev.ms.07.080177.001323
  18. P.B. Barna, M. Adamik. Thin Solid Films., 317, 27 (1988). DOI: 10.1016/S0040-6090(97)00503-8
  19. A.M. Ismailov, L.L. Emiraslanova, M.K. Rabadanov, M.R. Rabadanov, I.Sh. Aliev. Tech. Phys. Lett., 44, 528 (2018). DOI: 10.1134/S1063785018060202
  20. A.P. Tarasov, I.D. Venevtsev, A.E. Muslimov, L.A. Zadorozhnaya, P.A. Rodnyi, V.M. Kanevsky. Quantum Electron., 51 (5), 366 (2021). DOI: 10.1070/QEL17534
  21. A.E. Muslimov, M.Kh. Rabadanov, A.M. Ismailov, Prikladnaya fizika, 3, 72 (2017) (in Russian)
  22. C.F. Klingshirn. Semiconductor Optics, 4th ed. (Springer, Berlin, 2012)
  23. C. Klingshirn, R. Hauschild, J. Fallert, H. Kalt. Phys. Rev. B, 75, 1 (2007). DOI: 10.1103/PhysRevB.75.115203
  24. M.A. Versteegh, T. Kuis, H.T.C. Stoof, J. I. Dijkhuis. Phys. Rev. B, 84, 035207 (2011). DOI: 10.1103/PhysRevB.84.035207
  25. U. Ozgur, Y.I. Alivov, C. Liu, A. Teke, M. Reshchikov, S. Dov gan, V. Avrutin, S.-J. Cho, A.H. Morko c. J. Appl. Phys., 98, 11 (2005). DOI: 10.1063/1.1992666
  26. S.A. Studenikin, M. Cocivera. J. Appl. Phys., 91 (8), 5060 (2002). DOI: 10.1063/1.1461890
  27. M.V. Ryzhkov, S.I. Rumyantsev, V.M. Markushev, Ch.M. Briskina, A.P. Tarasov. J. Appl. Spectrosc., 81, 877 (2014). DOI: 10.1007/s10812-014-0021-8
  28. S. Rumyantsev, A. Tarasov, C. Briskina, M. Ryzhkov, V. Markushev, A. Lotin. J. Nanophotonics, 10, 016001 (2016). DOI: 10.1117/1.JNP.10.016001
  29. M. Nakayama, Y. Nakayama. J. Phys. Soc. Japan., 88 (8), 083706 (2019). DOI: 10.7566/JPSJ.88.083706
  30. A.P. Tarasov, L.A. Zadorozhnaya, A.E. Muslimov, Ch.M. Briskina, V.M. Kanevsky. JETP Lett., 114, 517 (2021). DOI: 10.1134/S0021364021210116.

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