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Spin magnetoresistance of a strontium iridate/manganite heterostructure
Russian version
DOI: 10.21883/PSS.2022.10.54227.46HH
Constantinian K. Y. 1, Ovsyannikov G. A.1, Shadrin A. V.1,2, Shmakov V. A.1, Petrzhik A. M.1, Kislinskii Yu. V.1, Klimov A. A. 1,3
1Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
2Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, Russia
3MIREA - Russian Technological University, Moscow, Russia
Email: karen@hitech.cplire.ru, gena@hitech.cplire.ru, anton_sh@hitech.cplire.ru, shmakov-va@hitech.cplire.r, vodnik85@mail.ru, yulii@hitech.cplire.ru, klimov@mirea.ru
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The results of the angular dependences of the magnetoresistance of the SrIrO3/La0.7Sr0.3MnO3 heterostructure made of oxide thin films epitaxially grown on a NdGaO3 substrate are presented and discussed. The resistance of the heterostructure was measured in configuration of planar Hall effect with magnetic field applied in parallel making possible to estimate the spin-Hall angle. The contribution of the anisotropic magnetoresistance and the spin-Hall magnetoresistance occurred due to strong spin-orbit interaction in the SrIrO3 film were evaluated. Keywords: strontium iridate, spin-orbit interaction, spin magnetoresistance, spin-Hall angle.
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